T. Yamaguchi, R. Iijima, T. Ino, A. Nishiyama, H. Satake, N. Fukushima
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引用次数: 36
Abstract
By controlling the crystallization in Hf-silicate gate dielectrics, we directly observed that the crystallized-HfO/sub 2/ portions in Hf-silicate degrade the electron mobility in Hf-silicate gate MISFETs. The degradation is proportional to the amount of crystallized portions in the Hf-silicate, which induce Coulomb scattering, in addition to substrate impurity scattering. Furthermore, we quantitatively investigated the contributions of the additional scattering to the electron mobility in Hf-silicate gate MISFETs.
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