Analysis of thermal effects of through silicon via in 3D IC using Infrared microscopy

Abstract

Thermal management of 3D IC is an important factor in terms of performance and reliability. In this study, the feasibility of Cu TSV as a heat dissipation path was experimentally investigated. 40 μm thick Si wafer was point-heated at 50 °, 100 °, 150 ° and 200 ° and surface temperature profile on the other side was observed using IR microscope. Specimens with TSV showed higher maximum temperature and larger hot area than ones without TSV above 100 °, which implies TSV delivered the heat faster than Si bulk and can be used as a fast heat dissipation path. In a two tier stacked structure, the effect of TSV was not noticeable because of thick substrate wafer.