Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook

IF 16.1 1区 工程技术 Q1 ENGINEERING, MANUFACTURING International Journal of Extreme Manufacturing Pub Date : 2023-01-18 DOI:10.1088/2631-7990/acb46d
Hye-mi Kim, Dong-Gyu Kim, Yoon‐Seo Kim, Min-Suk Kim, Jinsin Park
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引用次数: 2

Abstract

Since the first report of amorphous In–Ga–Zn–O based thin film transistors, interest in oxide semiconductors has grown. They offer high mobility, low off-current, low process temperature, and wide flexibility for compositions and processes. Unfortunately, depositing oxide semiconductors using conventional processes like physical vapor deposition leads to problematic issues, especially for high-resolution displays and highly integrated memory devices. Conventional approaches have limited process flexibility and poor conformality on structured surfaces. Atomic layer deposition (ALD) is an advanced technique which can provide conformal, thickness-controlled, and high-quality thin film deposition. Accordingly, studies on ALD based oxide semiconductors have dramatically increased recently. Even so, the relationships between the film properties of ALD-oxide semiconductors and the main variables associated with deposition are still poorly understood, as are many issues related to applications. In this review, to introduce ALD-oxide semiconductors, we provide: (a) a brief summary of the history and importance of ALD-based oxide semiconductors in industry, (b) a discussion of the benefits of ALD for oxide semiconductor deposition (in-situ composition control in vertical distribution/vertical structure engineering/chemical reaction and film properties/insulator and interface engineering), and (c) an explanation of the challenging issues of scaling oxide semiconductors and ALD for industrial applications. This review provides valuable perspectives for researchers who have interest in semiconductor materials and electronic device applications, and the reasons ALD is important to applications of oxide semiconductors.
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纳米级氧化半导体薄膜晶体管的原子层沉积:回顾与展望
自从首次报道非晶in - ga - zn - o基薄膜晶体管以来,人们对氧化物半导体的兴趣日益浓厚。它们提供高迁移率、低断流、低工艺温度以及广泛的组合物和工艺灵活性。不幸的是,使用物理气相沉积等传统工艺沉积氧化物半导体会导致问题,特别是对于高分辨率显示器和高度集成的存储设备。传统的方法在结构表面上具有有限的工艺灵活性和较差的一致性。原子层沉积(ALD)是一种先进的技术,可以提供保形、厚度控制和高质量的薄膜沉积。因此,近年来对ALD基氧化物半导体的研究急剧增加。尽管如此,与应用相关的许多问题一样,人们对ald氧化物半导体的薄膜特性与沉积相关的主要变量之间的关系仍然知之甚少。在这篇综述中,我们介绍了ald -氧化物半导体,我们提供:(a)简要总结了基于ALD的氧化物半导体在工业中的历史和重要性,(b)讨论了ALD在氧化物半导体沉积中的好处(垂直分布的原位成分控制/垂直结构工程/化学反应和薄膜性能/绝缘体和界面工程),以及(c)解释了氧化半导体和ALD在工业应用中的缩放问题。这一综述为研究半导体材料和电子器件应用的研究人员提供了有价值的视角,以及ALD对氧化物半导体应用的重要意义。
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来源期刊
International Journal of Extreme Manufacturing
International Journal of Extreme Manufacturing Engineering-Industrial and Manufacturing Engineering
CiteScore
17.70
自引率
6.10%
发文量
83
审稿时长
12 weeks
期刊介绍: The International Journal of Extreme Manufacturing (IJEM) focuses on publishing original articles and reviews related to the science and technology of manufacturing functional devices and systems with extreme dimensions and/or extreme functionalities. The journal covers a wide range of topics, from fundamental science to cutting-edge technologies that push the boundaries of currently known theories, methods, scales, environments, and performance. Extreme manufacturing encompasses various aspects such as manufacturing with extremely high energy density, ultrahigh precision, extremely small spatial and temporal scales, extremely intensive fields, and giant systems with extreme complexity and several factors. It encompasses multiple disciplines, including machinery, materials, optics, physics, chemistry, mechanics, and mathematics. The journal is interested in theories, processes, metrology, characterization, equipment, conditions, and system integration in extreme manufacturing. Additionally, it covers materials, structures, and devices with extreme functionalities.
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