Challenges with tunneled dialysis catheter placement with subcutaneous emphysema.

IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Semiconductor Science and Technology Pub Date : 2023-11-01 Epub Date: 2022-03-27 DOI:10.1177/11297298221085421
Michael George, James Lane, Tushar J Vachharajani
{"title":"Challenges with tunneled dialysis catheter placement with subcutaneous emphysema.","authors":"Michael George, James Lane, Tushar J Vachharajani","doi":"10.1177/11297298221085421","DOIUrl":null,"url":null,"abstract":"<p><p>Central vein catheter is a convenient and preferred vascular access for blood purification therapy in intensive care unit. Utilizing ultrasound to access the central vein is considered standard of care. However, critically ill patients can pose challenges while acquiring an optimal ultrasound image. The presence of subcutaneous air pockets, concerns for air embolism, and excessive bleeding from the exit site is one such clinical situation. We describe our experience with a unique situation while placing a tunneled dialysis catheter in a COVID-19 patient with acute respiratory failure and subcutaneous emphysema.</p>","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"6 1","pages":"1235-1238"},"PeriodicalIF":2.1000,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1177/11297298221085421","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2022/3/27 0:00:00","PubModel":"Epub","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

Central vein catheter is a convenient and preferred vascular access for blood purification therapy in intensive care unit. Utilizing ultrasound to access the central vein is considered standard of care. However, critically ill patients can pose challenges while acquiring an optimal ultrasound image. The presence of subcutaneous air pockets, concerns for air embolism, and excessive bleeding from the exit site is one such clinical situation. We describe our experience with a unique situation while placing a tunneled dialysis catheter in a COVID-19 patient with acute respiratory failure and subcutaneous emphysema.

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隧道式透析导管置入皮下气肿的挑战。
中心静脉导管是重症监护病房血液净化治疗的便捷首选血管通路。利用超声波进入中心静脉被认为是标准的护理方法。然而,重症患者在获取最佳超声图像时可能会遇到困难。皮下气囊的存在、对空气栓塞的担忧以及出口部位出血过多就是其中一种临床情况。我们描述了在为一名患有急性呼吸衰竭和皮下气肿的 COVID-19 患者置入隧道式透析导管时遇到的特殊情况。
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来源期刊
Semiconductor Science and Technology
Semiconductor Science and Technology 工程技术-材料科学:综合
CiteScore
4.30
自引率
5.30%
发文量
216
审稿时长
2.4 months
期刊介绍: Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.
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