MHz pulsed power by semiconductor devices

Weihua Jiang, T. Yokoo, K. Saiki, K. Hisayama, K. Narita, Ken Takayama, M. Wake, N. Shimizu
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Abstract

Pulsed power generators with repetition rates on the order of MHz have been developed by using semiconductor opening switch (SOS), static induction thyristor (SIThy), and silicon carbide junction field-effect-transistor (SiC-JFET). A compact SOS circuit based on inductive energy storage has been developed. It uses semiconductor switches for forward and reverse current control of the SOS diodes, instead of commonly used magnetic switch. The repetition rate has reached 500 kHz (burst) for output voltage pulse of 10 kV and pulse width of 15 ns (FWHM). A full-bridge switching unit using SIThy has been developed and tested for bipolar square voltage pulse generation of plusmn 2 kV for a 100-Omega load, at repetition rate of 1 MHz (burst). A stacked SiC-JFET switching unit consists of 4 devices (2S x 2P) has been operated for 2 kV and 20 A at repetition rate up to 5 MHz (burst). Important issues on switching characteristics, such as rise- time, heat loading, and balance between devices have been studied. The MHz-repetitive power modulators are expected to have various applications in the future, especially for high- energy accelerators and biological treatment.
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半导体器件的兆赫脉冲功率
利用半导体开路开关(SOS)、静态感应晶闸管(SIThy)和碳化硅结场效应晶体管(SiC-JFET),研制了重复频率为MHz数量级的脉冲电源。研制了一种基于感应储能的小型SOS电路。它使用半导体开关来控制SOS二极管的正向和反向电流,而不是常用的磁性开关。当输出电压脉冲为10 kV,脉冲宽度为15 ns (FWHM)时,重复频率达到500 kHz(突发)。已经开发并测试了使用SIThy的全桥开关单元,用于在100 ω负载下产生plusmn 2 kV的双极方形电压脉冲,重复频率为1 MHz(突发)。堆叠SiC-JFET开关单元由4个器件(2S × 2P)组成,工作频率为2kv和20a,重复频率高达5 MHz(突发)。研究了开关特性的重要问题,如上升时间、热负荷和器件间的平衡等。兆赫频率重复功率调制器在未来具有广泛的应用前景,特别是在高能加速器和生物处理方面。
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