A Turković , P Dubc̆ek , Z Crnjak-Orel , S Bernstorff
{"title":"Small angle scattering of synchrotron radiation on nanosized CeO2 and CeO2-SnO2 thin films obtained by sol-gel dip-coating method","authors":"A Turković , P Dubc̆ek , Z Crnjak-Orel , S Bernstorff","doi":"10.1016/S0965-9773(99)00390-6","DOIUrl":null,"url":null,"abstract":"<div><p>Nanosized CeO<sub>2</sub>, and CeO<sub>2</sub>-SnO<sub>2</sub>, 100–500 nm thick, films on glass substrate were prepared using sol-gel dip-coating method procedure. The average grain size <R>, obtained by SAXS (small-angle X-ray scattering), varied with the number of dips for the CeO<sub>2</sub>-SnO<sub>2</sub> samples. For the CeO<sub>2</sub> films, obtained by dipping it 8 times, <R> increased compared to CeO<sub>2</sub>-SnO<sub>2</sub> films, which were obtained by the same number of dips, from 4.4 to 5.3 nm. Specific surface areas of both these films were also determined and varied from 0.18 × 10<sup>7</sup> to 0.51 × 10<sup>7</sup> cm<sup>−1</sup>. SAXS measurements also revealed the layered structure of CeO<sub>2</sub> and CeO<sub>2</sub>-SnO<sub>2</sub> films.</p></div>","PeriodicalId":18878,"journal":{"name":"Nanostructured Materials","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1999-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0965-9773(99)00390-6","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanostructured Materials","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0965977399003906","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
Nanosized CeO2, and CeO2-SnO2, 100–500 nm thick, films on glass substrate were prepared using sol-gel dip-coating method procedure. The average grain size <R>, obtained by SAXS (small-angle X-ray scattering), varied with the number of dips for the CeO2-SnO2 samples. For the CeO2 films, obtained by dipping it 8 times, <R> increased compared to CeO2-SnO2 films, which were obtained by the same number of dips, from 4.4 to 5.3 nm. Specific surface areas of both these films were also determined and varied from 0.18 × 107 to 0.51 × 107 cm−1. SAXS measurements also revealed the layered structure of CeO2 and CeO2-SnO2 films.
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