How electrical and chemical requirements for refets may coincide

P. Bergveld, A. Van Den Berg, P.D. Van Der Wal, M. Skowronska-Ptasinska, E.J.R. Sudhölter, D.N. Reinhoudt
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引用次数: 83

Abstract

After discussing the features of a differential ISFET/REFET measuring concept, the published attempts to construct a proper REFET are summarized. It is concluded that the present REFETs are based upon the addition of a blocking polymeric layer to the gate surface of an ISFET, but that this approach fails with respect to the required insensitivity to ionic strength variations as well as with respect to the electrical stability.

As a solution to these problems, this paper describes the development of a REFET concept that is based on the chemical attachment of a non-blocking polymeric layer. Characterization methods of these layers with respect to the electrical as well as the chemical behaviour are given and discussed.

Finally, the experimental results of an acrylate/polyHEMA-REFET are shown in a differential ISFET/REFET system.

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反射的电气和化学要求是如何一致的
在讨论了差分ISFET/REFET测量概念的特点之后,总结了已发表的构建合适REFET的尝试。结论是,目前的refet是基于在ISFET的栅极表面添加阻断聚合物层,但是这种方法在对离子强度变化的不敏感性以及电稳定性方面失败了。为了解决这些问题,本文描述了基于非阻塞聚合物层的化学附着的REFET概念的发展。给出并讨论了这些层的电学和化学性质的表征方法。最后,在差分ISFET/REFET系统中给出了丙烯酸酯/聚hema -REFET的实验结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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