A. Stefanescu, A. Muller, G. Konstantinidis, V. Buiculescu, A. Dinescu, A. Stavrinidis, D. Neculoiu, A. Cismaru
{"title":"SAW GaN/Si based resonators: Modeling and experimental validation","authors":"A. Stefanescu, A. Muller, G. Konstantinidis, V. Buiculescu, A. Dinescu, A. Stavrinidis, D. Neculoiu, A. Cismaru","doi":"10.1109/SMICND.2012.6400656","DOIUrl":null,"url":null,"abstract":"We report on new models developed for surface acoustic wave resonators (SAW) on GaN/Si substrate working on frequencies above 5 GHz. The devices are composed of interdigital transducers (IDT) with finger and interdigit spacings 200nm wide. Different examples of modeling these devices, from 1D equivalent circuit to 3D FEM model are presented. The simulations are validated with experimental results for one port SAW and for a two port resonator SAW devicse.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"85 1","pages":"193-196"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2012 (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2012.6400656","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
We report on new models developed for surface acoustic wave resonators (SAW) on GaN/Si substrate working on frequencies above 5 GHz. The devices are composed of interdigital transducers (IDT) with finger and interdigit spacings 200nm wide. Different examples of modeling these devices, from 1D equivalent circuit to 3D FEM model are presented. The simulations are validated with experimental results for one port SAW and for a two port resonator SAW devicse.
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