Epitaxial growth controlled tailoring of Metal-Insulator (MI) Transition properties of rare earth correlated oxides

Abstract

Strongly correlated electron devices using Metal Insulator Transition (MIT) Oxides are prospective alternatives along the new generation of high speed devices based on novel mechanisms. Taking the advantages of correlated electrons which are capable of forming a variety of electronic phases, MIT Oxides and Phase Change Materials (PCM) are treated as the frontiers of emergent device research. With the prospect of downsizing devices to the nanoscale regime, benefits over conventional semiconductor devices are attained. Aided by recent advances in fabrication technology, considerable improvements have been achieved to tailor the Metal-Insulator (MI) transition properties of MIT Oxides. In this study, the tailoring of MI transition properties for a particular group of MIT Oxides, namely the transition metal perovskite oxides of RNiO3 family are studied on the epitaxial platform. Finally, antiferromagnetism characteristics and anonymous resistivity inherent within those oxides are studied.