Evaluating Interconnection Schemes for Semi-transparent Perovskite Mini-modules

Colin D. Bailie, C. Eberspacher, Timothy S. Gehan, R. Bramante, M. Van Hest
{"title":"Evaluating Interconnection Schemes for Semi-transparent Perovskite Mini-modules","authors":"Colin D. Bailie, C. Eberspacher, Timothy S. Gehan, R. Bramante, M. Van Hest","doi":"10.1109/PVSC40753.2019.9198965","DOIUrl":null,"url":null,"abstract":"This work evaluates the critical issues surrounding P1, P2, and P3 scribing for semi-transparent perovskite module integration. We find that P1 scribing procedures are well-translated from other thin-film technologies. P2 scribing is best performed with a mechanical scribe, but remains a source of series resistance. P3 scribing is found to cause an increase in scribing dead area and a potential degradation source.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"9 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC40753.2019.9198965","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

This work evaluates the critical issues surrounding P1, P2, and P3 scribing for semi-transparent perovskite module integration. We find that P1 scribing procedures are well-translated from other thin-film technologies. P2 scribing is best performed with a mechanical scribe, but remains a source of series resistance. P3 scribing is found to cause an increase in scribing dead area and a potential degradation source.
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半透明钙钛矿微型模块互连方案评价
这项工作评估了半透明钙钛矿模块集成中围绕P1、P2和P3刻划的关键问题。我们发现P1的誊写程序很好地从其他薄膜技术中翻译过来。P2划痕最好使用机械划痕,但仍然是串联电阻的来源。发现P3划痕造成划痕死区增加,是潜在的劣化源。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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