Separation of a Functional Film from a SiC Substrate by Ion Cut without Bonding

Abstract

A new method that separates a film of SiC with a GaN epi layer from the main body of a substrate is presented in this paper. The method uses proton implantation to generate an ion damaged layer underneath the surface of the SiC substrate. A GaN epi functional layer is deposited on the SiC substrate after the ion implantation. Without bonding the wafer to any other wafer, a stress inducing layer is applied on the GaN layer to separate the GaN layer and the SiC film from the main body of substrate at previously introduced ion damage layer.