W-Band RF MEMS Double and Triple-Stub Impedance Tuners

T. Vähä‐Heikkilä, J. Varis, J. Tuovinen, G. Rebeiz
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Abstract

Reconfigurable integrated impedance tuners have been developed for W-Band on-wafer noise parameter and loadpull measurement applications. The impedance tuners are based on double and triple-stub topologies and employ 11 switched MEMS capacitors producing 2048 (211) different impedances. Measured ${\left\vert\Gamma_{MAX} \right\vert}$ for the double-stub tuner is 0.92 and 0.82 at 75 and 100 GHz from 110 measurements out of 2048 possible impedances, and 0.92 and 0.83 for the triple-stub tuner. To our knowledge, this represents the first W-band integrated impedance tuner to date.
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w波段射频MEMS双根和三根阻抗调谐器
可重构集成阻抗调谐器已开发用于w波段片上噪声参数和负载拉测量应用。阻抗调谐器基于双根和三根拓扑结构,采用11个开关MEMS电容器,产生2048(211)个不同的阻抗。在2048个可能的阻抗中,双根调谐器在75 GHz和100 GHz下的测量值${\left\vert\Gamma_{MAX} \right\vert}$为0.92和0.82,三根调谐器的测量值为0.92和0.83。据我们所知,这是迄今为止第一个w波段集成阻抗调谐器。
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