Elizabeth Palmiotti, S. Karki, Benjamin Belfore, Sina Soltanmohammad, G. Rajan, S. Marsillac, A. Rockett
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引用次数: 4
Abstract
CIGS films deposited at 400°C onto molybdenum-coated soda-lime glass substrates by co-evaporation were annealed in InBr3 vapors or CuBr with Se vapors. The treatments were conducted at 400°C, 450°C, or 500°C for one hour. The InBr3 treatments above 400°C and CuBr with Se treatments at 500°C resulted in increased grain size, improved crystallinity, and a decrease in Cu2Se phase. Annealed samples also exhibited large surface facets. CIGS films deposited at 350°C were also investigated in InBr3 and CuBr with Se vapors at 450°C for one hour. These treatments resulted in increased grain size and less deviations from the as-deposited composition.
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