Laser micromachining of Circular Transmission Line Model (CTLM) of Al contacts on n-type SiC/Si chips

N. F. Mohd Nasir, K. A. Hassan, P. Leech, G. K. Reeves, A. Holland, Y. Wahab, M. Mazalan, P. Tanner
{"title":"Laser micromachining of Circular Transmission Line Model (CTLM) of Al contacts on n-type SiC/Si chips","authors":"N. F. Mohd Nasir, K. A. Hassan, P. Leech, G. K. Reeves, A. Holland, Y. Wahab, M. Mazalan, P. Tanner","doi":"10.1109/RSM.2015.7355003","DOIUrl":null,"url":null,"abstract":"An array of Circular Transmission Line Model (CTLM) metal contacts was deposited onto the upper surface of the n-SiC/Si chips using laser micromachining as an alternative to standard photolithography technique. Thin epitaxial n-type 3C-SiC/Si chips were used since no current leakage observed in previous studies. Various laser energies were used for the CTLM pattern transfer. Low values of ρc were obtained such 19×10-4 Ωcm2 was produced despite of different rings' diameters at the lower laser energy strength. However, high laser penetration had caused higher contact resistances approximately 20 times. This is probably attributed to the surface degradation of 3C-SiC.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"66 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSM.2015.7355003","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

An array of Circular Transmission Line Model (CTLM) metal contacts was deposited onto the upper surface of the n-SiC/Si chips using laser micromachining as an alternative to standard photolithography technique. Thin epitaxial n-type 3C-SiC/Si chips were used since no current leakage observed in previous studies. Various laser energies were used for the CTLM pattern transfer. Low values of ρc were obtained such 19×10-4 Ωcm2 was produced despite of different rings' diameters at the lower laser energy strength. However, high laser penetration had caused higher contact resistances approximately 20 times. This is probably attributed to the surface degradation of 3C-SiC.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
n型SiC/Si芯片Al触点圆形传输线模型的激光微加工
采用激光微加工技术替代标准光刻技术,将圆形传输线模型(CTLM)金属触点阵列沉积在n-SiC/Si芯片的上表面。由于在以往的研究中未观察到电流泄漏,因此采用了薄外延n型3C-SiC/Si芯片。利用不同的激光能量进行CTLM图案转移。在较低的激光能量强度下,尽管环直径不同,ρc值也很低。然而,高激光穿透造成高接触电阻约20倍。这可能是由于3C-SiC的表面降解所致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Investigation on Optical Interconnect(OI) link performance using external modulator Modeling and simulation of polysilicon piezoresistors in a CMOS-MEMS resonator for mass detection FPGA-based hardware-in-the-loop verification of dual-stage HDD head position control A comparative study of photocurable sensing membrane for Potassium ChemFET sensor The vertical strained impact ionization MOSFET (VESIMOS) for ultra-sensitive biosensor application
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1