Pub Date : 2015-12-17DOI: 10.1109/RSM.2015.7354963
Imran Ali, M. H. M. Md Khir, Z. Baharudin, K. Ashraf
This paper presents the design, modeling, and simulation of a multiple resonant MEMS vibration energy harvester (VEH) suitable for wireless sensor network (WSN) applications. Since ambient vibration has a frequency of 100 Hz and below, a multiple resonant harvester will be an advantage to increase the vibration frequency and hence the output voltage produced by the device. The high frequency harvester is designed using CMOS technology capable of monolithically integration with any CMOS circuits. For a standard button battery size (16 × 16 × 5 mm3) harvester, simulation result shows that the harvester can provide peak voltage of 3.0 Volts at 20 Hz and 1 g vibration with a single high frequency oscillator. The series configuration of high frequency structures can provide multiple of 3.0 Volts output voltage.
{"title":"CMOS-MEMS multiple resonant vibration energy harvester for wireless sensor network","authors":"Imran Ali, M. H. M. Md Khir, Z. Baharudin, K. Ashraf","doi":"10.1109/RSM.2015.7354963","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354963","url":null,"abstract":"This paper presents the design, modeling, and simulation of a multiple resonant MEMS vibration energy harvester (VEH) suitable for wireless sensor network (WSN) applications. Since ambient vibration has a frequency of 100 Hz and below, a multiple resonant harvester will be an advantage to increase the vibration frequency and hence the output voltage produced by the device. The high frequency harvester is designed using CMOS technology capable of monolithically integration with any CMOS circuits. For a standard button battery size (16 × 16 × 5 mm3) harvester, simulation result shows that the harvester can provide peak voltage of 3.0 Volts at 20 Hz and 1 g vibration with a single high frequency oscillator. The series configuration of high frequency structures can provide multiple of 3.0 Volts output voltage.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"111 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77876576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/RSM.2015.7355024
F. A. Said, P. Menon, T. Kalaivani, M. A. Mohamed, A. Abedini, S. Shaari, B. Majlis, V. Retnasamy
We numerically investigated 3-dimensional (3D) sub-wavelength structured metallic nanohole films with various thicknesses using wavelength interrogation technique. The reflectivity and full-width at half maximum (FWHM) of the localized surface plasmon resonance (LSPR) spectra was calculated using finite-difference time domain (FDTD) method. Results showed that a 100nm-thick silver nanohole gave higher reflectivity of 92% at the resonance wavelength of 644nm. Silver, copper and aluminum structured thin films showed only a small difference in the reflectivity spectra for various metallic film thicknesses whereas gold thin films showed a reflectivity decrease as the film thickness was increased. However, all four types of metallic nanohole films exhibited increment in FWHM (broader curve) and the resonance wavelength was red-shifted as the film thicknesses were decreased.
{"title":"FDTD analysis of structured metallic nanohole films for LSPR-based biosensor","authors":"F. A. Said, P. Menon, T. Kalaivani, M. A. Mohamed, A. Abedini, S. Shaari, B. Majlis, V. Retnasamy","doi":"10.1109/RSM.2015.7355024","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355024","url":null,"abstract":"We numerically investigated 3-dimensional (3D) sub-wavelength structured metallic nanohole films with various thicknesses using wavelength interrogation technique. The reflectivity and full-width at half maximum (FWHM) of the localized surface plasmon resonance (LSPR) spectra was calculated using finite-difference time domain (FDTD) method. Results showed that a 100nm-thick silver nanohole gave higher reflectivity of 92% at the resonance wavelength of 644nm. Silver, copper and aluminum structured thin films showed only a small difference in the reflectivity spectra for various metallic film thicknesses whereas gold thin films showed a reflectivity decrease as the film thickness was increased. However, all four types of metallic nanohole films exhibited increment in FWHM (broader curve) and the resonance wavelength was red-shifted as the film thicknesses were decreased.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"5 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81519200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/RSM.2015.7354966
A. Rabih, M. H. M. Md Khir, A. Y. Ahmed, M. A. A. Ahmed, J. Dennis
A MEMS vapor sensor for acetone detection in exhaled breath (EB) has been fabricated using 0.35 μm CMOS technology. Acetone vapor in EB is used as a non-invasive method for diabetes screening, which is currently conducted invasively by measuring blood glucose in blood. This paper studies the characterization of polysilicon piezoresistors, heater and temperature sensor embedded in the device. The measured resistances were found to be close to the modelled values within 1.1-6.8% error. Temperature coefficient of resistance (TCR) of the temperature sensor in a range of 25-100°C was found. TCR increases linearly with increasing the temperature and decreases linearly with decreasing the temperature. It was found to be 0.0033/°C for the increasing temperature and 0.0034/°C for the decreasing temperature, compared to 0.0038/°C reported in the literature, with an error of 13% and 10.5%, respectively.
{"title":"Characterization of CMOS-MEMS device for acetone vapor detection in exhaled breath","authors":"A. Rabih, M. H. M. Md Khir, A. Y. Ahmed, M. A. A. Ahmed, J. Dennis","doi":"10.1109/RSM.2015.7354966","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354966","url":null,"abstract":"A MEMS vapor sensor for acetone detection in exhaled breath (EB) has been fabricated using 0.35 μm CMOS technology. Acetone vapor in EB is used as a non-invasive method for diabetes screening, which is currently conducted invasively by measuring blood glucose in blood. This paper studies the characterization of polysilicon piezoresistors, heater and temperature sensor embedded in the device. The measured resistances were found to be close to the modelled values within 1.1-6.8% error. Temperature coefficient of resistance (TCR) of the temperature sensor in a range of 25-100°C was found. TCR increases linearly with increasing the temperature and decreases linearly with decreasing the temperature. It was found to be 0.0033/°C for the increasing temperature and 0.0034/°C for the decreasing temperature, compared to 0.0038/°C reported in the literature, with an error of 13% and 10.5%, respectively.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"21 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82610018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/RSM.2015.7355029
A. Hamzah, Adila Syaidatul Azman, R. Ismail, Z. Johari
Graphene Nanoscroll Field-Effect-Transistor (GNSFET) potential is assessed in replacing silicon as the next scaled transistor. The GNSFET is benchmarked with 22nm PTM model silicon MOSFET. The silicon MOSFET I-V characteristics were computed using HSpice Cadence tools. The charge distribution in GNSFET was characterized based on the Landauer Buttiker's formalism. The output current shows good agreement with the experimental results at constant conductance and GNS structural parameters. Subthreshold swing (SS), drain induced barrier lowering (DIBL), and on-off ratio, Ion/Ioff were extracted from both MOSFET and GNSFET in order to be analyzed in terms of their switching capability. Overall, the GNSFET seems to possess superior DIBL and SS despite lower Ion/Ioff ratio.
{"title":"Performance benchmarking of graphene nanoscroll transistor with 22nm MOSFET model","authors":"A. Hamzah, Adila Syaidatul Azman, R. Ismail, Z. Johari","doi":"10.1109/RSM.2015.7355029","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355029","url":null,"abstract":"Graphene Nanoscroll Field-Effect-Transistor (GNSFET) potential is assessed in replacing silicon as the next scaled transistor. The GNSFET is benchmarked with 22nm PTM model silicon MOSFET. The silicon MOSFET I-V characteristics were computed using HSpice Cadence tools. The charge distribution in GNSFET was characterized based on the Landauer Buttiker's formalism. The output current shows good agreement with the experimental results at constant conductance and GNS structural parameters. Subthreshold swing (SS), drain induced barrier lowering (DIBL), and on-off ratio, Ion/Ioff were extracted from both MOSFET and GNSFET in order to be analyzed in terms of their switching capability. Overall, the GNSFET seems to possess superior DIBL and SS despite lower Ion/Ioff ratio.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"6 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83568378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/RSM.2015.7355000
R. Adzhri, M. K. Md Arshad, M. Fathil, U. Hashim, A. R. Ruslinda, R. M. Ayub, S. Gopinath, C. Voon, K. L. Foo, M. Nuzaihan, A. H. Azman, M. Zaki
Biosensors become a main attraction nowadays due to its importance towards human health. Its allow rapid and label-free detection that provides low cost clinical sampling. A FET device was fabricated from silicon-on-insulator (SOI) type of wafer with titanium dioxide (TiO2) thin film as a sensing medium. TiO2 was deposited by using sol-gel solution, spin coated on the device, patterned and anneal. The physical characterization by using AFM and XRD was conducted to confirm the thin film was a TiO2 and electrical characterization was to determine the electrical properties, stability and sensitivity of the devices. From the result AFM and XRD confirm the thin layer was a TiO2 layer with grain boundaries and several peaks of TiO2 anatase crystal structure. The current-voltage (I-V and Vbg-Id) show that the TiO2 thin film has a good electrical properties and sensitivity that very suitable in sensing application especially detecting biomolecules for disease detection.
{"title":"Characteristics of TiO2 thin film with back-gate biasing for FET-based biosensors application","authors":"R. Adzhri, M. K. Md Arshad, M. Fathil, U. Hashim, A. R. Ruslinda, R. M. Ayub, S. Gopinath, C. Voon, K. L. Foo, M. Nuzaihan, A. H. Azman, M. Zaki","doi":"10.1109/RSM.2015.7355000","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355000","url":null,"abstract":"Biosensors become a main attraction nowadays due to its importance towards human health. Its allow rapid and label-free detection that provides low cost clinical sampling. A FET device was fabricated from silicon-on-insulator (SOI) type of wafer with titanium dioxide (TiO2) thin film as a sensing medium. TiO2 was deposited by using sol-gel solution, spin coated on the device, patterned and anneal. The physical characterization by using AFM and XRD was conducted to confirm the thin film was a TiO2 and electrical characterization was to determine the electrical properties, stability and sensitivity of the devices. From the result AFM and XRD confirm the thin layer was a TiO2 layer with grain boundaries and several peaks of TiO2 anatase crystal structure. The current-voltage (I-V and Vbg-Id) show that the TiO2 thin film has a good electrical properties and sensitivity that very suitable in sensing application especially detecting biomolecules for disease detection.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"22 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81795324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/RSM.2015.7355001
M. Zaki, U. Hashim, M. K. Md Arshad, M. Fathil, A. R. Ruslinda, R. M. Ayub, S. Gopinath, C. Voon, K. L. Foo, R. Adzhri, A. H. Azman
This paper presents real time detection of formaldehyde gas by using the properties of tin dioxide (SnO2) thin film on a formaldehyde gas sensor. SnO2 thin film is coated on aluminum IDE electrodes which is fabricated on a glass substrate by using sol-gel technique and annealed to get the crystallization of SnO2. The surface morphologies of the SnO2 thin film is examined and studied through atomic force microscopy (AFM). For the real-time detection, formaldehyde gas was inject inside the gas chamber. The hot plate with the temperature of 200°C inside the gas chamber is used to evaporate the formaldehyde gas, subsequently exposing it to the surface of SnO2 thin film. Electrical conductivity of the SnO2 thin film is increased and allowed current to flow through it. The potential difference at the gas sensor is measured using voltmeter. During real time detection, various amount of formaldehyde liquid which are 0.1 μl, 0.3 μl, and 0.5 μl are injected into the gas chamber, thus produced potential differences of 0.8 V, 2.2 V and 3.5 V, respectively.
{"title":"Real-time detection by properties of tin dioxide for formaldehyde gas sensor","authors":"M. Zaki, U. Hashim, M. K. Md Arshad, M. Fathil, A. R. Ruslinda, R. M. Ayub, S. Gopinath, C. Voon, K. L. Foo, R. Adzhri, A. H. Azman","doi":"10.1109/RSM.2015.7355001","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355001","url":null,"abstract":"This paper presents real time detection of formaldehyde gas by using the properties of tin dioxide (SnO2) thin film on a formaldehyde gas sensor. SnO2 thin film is coated on aluminum IDE electrodes which is fabricated on a glass substrate by using sol-gel technique and annealed to get the crystallization of SnO2. The surface morphologies of the SnO2 thin film is examined and studied through atomic force microscopy (AFM). For the real-time detection, formaldehyde gas was inject inside the gas chamber. The hot plate with the temperature of 200°C inside the gas chamber is used to evaporate the formaldehyde gas, subsequently exposing it to the surface of SnO2 thin film. Electrical conductivity of the SnO2 thin film is increased and allowed current to flow through it. The potential difference at the gas sensor is measured using voltmeter. During real time detection, various amount of formaldehyde liquid which are 0.1 μl, 0.3 μl, and 0.5 μl are injected into the gas chamber, thus produced potential differences of 0.8 V, 2.2 V and 3.5 V, respectively.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"32 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76146972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/RSM.2015.7354967
O. Hussein, W. Z. Wan Hasan, A. C. Soh, H. Jafaar
This paper proposes a fundamental study and detailed investigation about the insole touch area of plantar pressure to be considered as a reference measurement for all researchers that study any location over the insole area. A 101 pressure sensor positions, that number represents the most covered area of the insole, these 101 locations were investigated in this work to find out the variation limits for each individual point. A different gain conditioning circuits based on the supply op-amp has been used to measure the output of the sensors to fulfill sufficient accuracy. The measurements have been carried out on one size foot, but with persons have different weights to prove the proposed method hypothesis. It is found that more than 80% of the measured points were different, even for different body weights. The measurements resulted in that maximum applied force, and consequently the mass, not exceed one kilogram, while the minimum approach to a few grams. The verification of the hypothesis is satisfied when the accumulation of all points, in terms of mass, results in “Total body weight/242%”.
本文提出了一项关于足底接触区足底压力的基础研究和详细调查，以作为所有研究人员研究鞋底区域以上任何位置的参考测量。101个压力传感器位置，这个数字代表鞋垫覆盖的面积最大，这101个位置在这项工作中被调查，以找出每个单独点的变化极限。采用基于电源运放的不同增益调理电路来测量传感器的输出，以满足足够的精度。在同一尺寸的脚上进行了测量，但与不同体重的人进行了测量，以证明所提出的方法假设。研究发现，即使对于不同的体重，也有80%以上的测量点是不同的。测量结果表明，最大施加的力，因此质量，不超过一公斤，而最小接近几克。当所有点以质量计的累加结果为“Total body weight/242%”时，假设的验证得到满足。
{"title":"Fundamental references over insole plantar pressure in terms of human body weight percentage","authors":"O. Hussein, W. Z. Wan Hasan, A. C. Soh, H. Jafaar","doi":"10.1109/RSM.2015.7354967","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354967","url":null,"abstract":"This paper proposes a fundamental study and detailed investigation about the insole touch area of plantar pressure to be considered as a reference measurement for all researchers that study any location over the insole area. A 101 pressure sensor positions, that number represents the most covered area of the insole, these 101 locations were investigated in this work to find out the variation limits for each individual point. A different gain conditioning circuits based on the supply op-amp has been used to measure the output of the sensors to fulfill sufficient accuracy. The measurements have been carried out on one size foot, but with persons have different weights to prove the proposed method hypothesis. It is found that more than 80% of the measured points were different, even for different body weights. The measurements resulted in that maximum applied force, and consequently the mass, not exceed one kilogram, while the minimum approach to a few grams. The verification of the hypothesis is satisfied when the accumulation of all points, in terms of mass, results in “Total body weight/242%”.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"63 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90526181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/RSM.2015.7355021
D. Mahmudin, T. T. Estu, P. Daud, I. Hermida, G. Sugandi, Y. N. Wijayanto, P. Menon, S. Shaari
In this paper, a multi-path optical ring resonator (MpORR) on silicon-on-insolator (SOI) is proposed for sensitivity enhancement in liquid chemical sensing applications. It is designed on Silicon Dioxide (SiO2) substrate and Silicon material as the core of optical waveguides. The proposed multi-path optical ring resonator can be realized with a wide free spectral value (FSR) of 3 THz. Therefore, the sensitivity of the sensor can be enhanced. Analysis and optimization of the proposed multi-path optical ring resonator are discussed and reported for optical wavelength operation of 1550 nm. The proposed device can be used for identifying different liquid material precisely.
{"title":"Sensitivity improvement of multipath optical ring resonators using silicon-on-insulator technology","authors":"D. Mahmudin, T. T. Estu, P. Daud, I. Hermida, G. Sugandi, Y. N. Wijayanto, P. Menon, S. Shaari","doi":"10.1109/RSM.2015.7355021","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355021","url":null,"abstract":"In this paper, a multi-path optical ring resonator (MpORR) on silicon-on-insolator (SOI) is proposed for sensitivity enhancement in liquid chemical sensing applications. It is designed on Silicon Dioxide (SiO2) substrate and Silicon material as the core of optical waveguides. The proposed multi-path optical ring resonator can be realized with a wide free spectral value (FSR) of 3 THz. Therefore, the sensitivity of the sensor can be enhanced. Analysis and optimization of the proposed multi-path optical ring resonator are discussed and reported for optical wavelength operation of 1550 nm. The proposed device can be used for identifying different liquid material precisely.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"21 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82155524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/RSM.2015.7355002
S. S. B. Hashwan, A. R. Ruslinda, M. F. Fatin, V. Thivina, V. Tony, M. Munirah, M. Arshad, C. Voon, R. M. Ayub, S. Gopinath, M. R. Muda, M. M. Ramli, U. Hashim
In this paper, we present the fabrication and electrical characterization of field-effect transistor-based sensor with integrated graphene oxide (GO) on channel between source and drain. We aim to demonstrate the optimum condition in electrical performance for field-effect transistor-based biosensor device. Graphene oxide prepared by using modified hummers method was deposited on the channel with different amount to act as amplification layer on the FET. The structural properties of GO were examined using photoluminescence (PL). A 3D surface profilometer were used to observe the surface morphology of GO-FET. Multi-graphene layer on the FET channel result in increasing the current flow in the device and make it more sensitive to be used as biosensor.
{"title":"Fabrication and electrical characterization of graphene oxide as transducing channel for biosensor application","authors":"S. S. B. Hashwan, A. R. Ruslinda, M. F. Fatin, V. Thivina, V. Tony, M. Munirah, M. Arshad, C. Voon, R. M. Ayub, S. Gopinath, M. R. Muda, M. M. Ramli, U. Hashim","doi":"10.1109/RSM.2015.7355002","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355002","url":null,"abstract":"In this paper, we present the fabrication and electrical characterization of field-effect transistor-based sensor with integrated graphene oxide (GO) on channel between source and drain. We aim to demonstrate the optimum condition in electrical performance for field-effect transistor-based biosensor device. Graphene oxide prepared by using modified hummers method was deposited on the channel with different amount to act as amplification layer on the FET. The structural properties of GO were examined using photoluminescence (PL). A 3D surface profilometer were used to observe the surface morphology of GO-FET. Multi-graphene layer on the FET channel result in increasing the current flow in the device and make it more sensitive to be used as biosensor.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"167 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80509490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/RSM.2015.7354953
M. Zainol, S. Johari, H. Fazmir, A. Anuar, Y. Wahab, M. Mazalan
Excimer laser micromachining enables us to overcome the conventional lithography-based microfabrication limitations and simplify the process of creating three dimensional (3D) microstructures. The objective of these study are to investigate the relation between frequency (f), number of laser pulse (P), fluence (F) and their etch performance. This paper presents a parametric characterization study on silicon using KrF excimer laser micromachining. From the result, the etch rate change were recorded as the three major laser parameters (frequency, number of pulse and fluence) were varied. From the results, we found that the fluence has the highest influence on silicon etching rate due to factors of photothermal and photochemical, while frequency and the number of laser pulses do not change the energy.
{"title":"Towards improving the etch performance of KrF excimer laser micromachining on silicon material","authors":"M. Zainol, S. Johari, H. Fazmir, A. Anuar, Y. Wahab, M. Mazalan","doi":"10.1109/RSM.2015.7354953","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354953","url":null,"abstract":"Excimer laser micromachining enables us to overcome the conventional lithography-based microfabrication limitations and simplify the process of creating three dimensional (3D) microstructures. The objective of these study are to investigate the relation between frequency (f), number of laser pulse (P), fluence (F) and their etch performance. This paper presents a parametric characterization study on silicon using KrF excimer laser micromachining. From the result, the etch rate change were recorded as the three major laser parameters (frequency, number of pulse and fluence) were varied. From the results, we found that the fluence has the highest influence on silicon etching rate due to factors of photothermal and photochemical, while frequency and the number of laser pulses do not change the energy.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"14 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90362756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：