The effect of GaAs capping layer thickness on quantum dot solar cell performance

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI:10.1109/PVSC.2013.6745134

D. Forbes, C. Bailey, S. Polly, A. Podell, S. Hubbard

{"title":"The effect of GaAs capping layer thickness on quantum dot solar cell performance","authors":"D. Forbes, C. Bailey, S. Polly, A. Podell, S. Hubbard","doi":"10.1109/PVSC.2013.6745134","DOIUrl":null,"url":null,"abstract":"The use of nanostructures such as quantum dots (QD) offers tremendous potential to realize high-efficiency photovoltaic (PV) cells. The optimization of the electronic structure of the layers within the QD region should lead to improved PV performance. This includes the QD layer itself, but also the surrounding barrier and/or strain balancing layers that comprise the QD active region. In this paper, the effect of the GaAs capping layer thickness (i.e. the first layer grown following QD) on the optoelectronic properties of InAs QDs was investigated. The GaAs capping layer plays a crucial role in the physical and optoelectronic properties of the QD. The GaAs capping thickness strongly modifies the InAs QD wavelength and also enhances the QD emission relative to the wetting layer (WL) emission. This behavior implies a suppression of WL emission that is thought to be a drawback to high-efficiency photovoltaic performance. In the final paper, we investigate how this WL PL-suppression affects the performance of QD-enhanced GaAs single junction solar cell performance.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"1 1","pages":"3203-3207"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2013.6745134","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

Abstract

The use of nanostructures such as quantum dots (QD) offers tremendous potential to realize high-efficiency photovoltaic (PV) cells. The optimization of the electronic structure of the layers within the QD region should lead to improved PV performance. This includes the QD layer itself, but also the surrounding barrier and/or strain balancing layers that comprise the QD active region. In this paper, the effect of the GaAs capping layer thickness (i.e. the first layer grown following QD) on the optoelectronic properties of InAs QDs was investigated. The GaAs capping layer plays a crucial role in the physical and optoelectronic properties of the QD. The GaAs capping thickness strongly modifies the InAs QD wavelength and also enhances the QD emission relative to the wetting layer (WL) emission. This behavior implies a suppression of WL emission that is thought to be a drawback to high-efficiency photovoltaic performance. In the final paper, we investigate how this WL PL-suppression affects the performance of QD-enhanced GaAs single junction solar cell performance.

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GaAs盖层厚度对量子点太阳能电池性能的影响

利用量子点(QD)等纳米结构为实现高效光伏电池提供了巨大的潜力。优化量子点区域内各层的电子结构可以提高PV的性能。这包括量子点层本身，也包括构成量子点活跃区域的周围势垒和/或应变平衡层。本文研究了GaAs封盖层厚度(即QD后生长的第一层)对InAs量子点光电性能的影响。GaAs封盖层对量子点的物理和光电子性能起着至关重要的作用。GaAs盖层厚度对InAs QD波长有明显的影响，并且相对于湿层(WL)发射增强了QD发射。这种行为意味着抑制WL发射，这被认为是高效光伏性能的缺点。在最后一篇论文中，我们研究了这种WL pl抑制如何影响量子点增强的GaAs单结太阳能电池的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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