{"title":"Effect of swift heavy ion irradiation on structural, electrical and optical properties of zinc-stannate thin films","authors":"Y. Kumar, Ravi Kumar, K. Asokan, Avineesh Singh","doi":"10.1063/1.5122432","DOIUrl":null,"url":null,"abstract":"In the present study, 120 MeV Ag ions were irradiated onzinc-stannate (Zn-Sn-O) thin films. The modifications in the structural, electrical and optical properties were studied using grazing-incidence x-ray diffraction (GIXRD), two probe method and UV-Vis spectroscopy. The crystalline to amorphous phase transformation was observed from GIXRD data. The electrical studies revealed that the resistivity has increased with doping and on irradiation. The minimum resistivity of 14 mΩ cm, at room temperature, has been observed for pristine Zn-Sn-O thin film. The average optical transmittance was above 75% in visible region for both pristine and SHI Irradiated zinc-stannate thin films.In the present study, 120 MeV Ag ions were irradiated onzinc-stannate (Zn-Sn-O) thin films. The modifications in the structural, electrical and optical properties were studied using grazing-incidence x-ray diffraction (GIXRD), two probe method and UV-Vis spectroscopy. The crystalline to amorphous phase transformation was observed from GIXRD data. The electrical studies revealed that the resistivity has increased with doping and on irradiation. The minimum resistivity of 14 mΩ cm, at room temperature, has been observed for pristine Zn-Sn-O thin film. The average optical transmittance was above 75% in visible region for both pristine and SHI Irradiated zinc-stannate thin films.","PeriodicalId":7262,"journal":{"name":"ADVANCES IN BASIC SCIENCE (ICABS 2019)","volume":"18 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2019-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ADVANCES IN BASIC SCIENCE (ICABS 2019)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.5122432","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
In the present study, 120 MeV Ag ions were irradiated onzinc-stannate (Zn-Sn-O) thin films. The modifications in the structural, electrical and optical properties were studied using grazing-incidence x-ray diffraction (GIXRD), two probe method and UV-Vis spectroscopy. The crystalline to amorphous phase transformation was observed from GIXRD data. The electrical studies revealed that the resistivity has increased with doping and on irradiation. The minimum resistivity of 14 mΩ cm, at room temperature, has been observed for pristine Zn-Sn-O thin film. The average optical transmittance was above 75% in visible region for both pristine and SHI Irradiated zinc-stannate thin films.In the present study, 120 MeV Ag ions were irradiated onzinc-stannate (Zn-Sn-O) thin films. The modifications in the structural, electrical and optical properties were studied using grazing-incidence x-ray diffraction (GIXRD), two probe method and UV-Vis spectroscopy. The crystalline to amorphous phase transformation was observed from GIXRD data. The electrical studies revealed that the resistivity has increased with doping and on irradiation. The minimum resistivity of 14 mΩ cm, at room temperature, has been observed for pristine Zn-Sn-O thin film. The average optical transmittance was above 75% in visible region for both pristine and SHI Irradiated zinc-stannate thin films.