Inkjet-Printing of Methylammonium Lead Trihalide Perovskite-Based Flexible Optoelectronic Devices

C. Trudeau, M. Bolduc, P. Beaupré, I. Ka, I. Asuo, S. Cloutier
{"title":"Inkjet-Printing of Methylammonium Lead Trihalide Perovskite-Based Flexible Optoelectronic Devices","authors":"C. Trudeau, M. Bolduc, P. Beaupré, I. Ka, I. Asuo, S. Cloutier","doi":"10.1109/IFETC.2018.8583950","DOIUrl":null,"url":null,"abstract":"In recent years, metal-organic methylammonium lead trihalide perovskite formulations have been extensively studied and employed as active materials in a range of photovoltaic and photodetector devices. Perovskite-based materials have gain popularity due to their unique optoelectronic properties which allow for simple device architecture to reach high energy harvesting efficiencies and responsivities over the whole visible light spectrum. These materials offer an advantage over conventional semiconductor materials and fabrication techniques as they do not require high temperatures or vacuum environments which are beneficial for fabricating devices on flexible, heat sensitive substrates.As the demand for low-cost and large-area flexible electronics increases, in part due to the rise of the internet of things (IoT), new routes in additive device fabrication techniques and advances inprintable materials are required. In this work, digital inkjet-printing in ambient atmosphere is proposed as a fabrication pathway for perovskite based flexible photodetectors in thin-film device architectures. The devices consisting of a printed methylammonium lead trihalide perovskite layer and a printed Spiro-OMeTAD hole transport layer fabricated on indium tin oxide (ITO) coated Polyethylene terephthalate (PET) flexible substrates are shown to have an average responsivity at 0 V bias of 7.7 μA/Win the range of 400 nm to 850 nm which is increased to 0.53 mA/Wand 1.17 mA/W when biases of 0.5 V and 1.0 V are applied, respectively.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"62 1","pages":"1-6"},"PeriodicalIF":0.0000,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Flexible Electronics Technology Conference (IFETC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IFETC.2018.8583950","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

In recent years, metal-organic methylammonium lead trihalide perovskite formulations have been extensively studied and employed as active materials in a range of photovoltaic and photodetector devices. Perovskite-based materials have gain popularity due to their unique optoelectronic properties which allow for simple device architecture to reach high energy harvesting efficiencies and responsivities over the whole visible light spectrum. These materials offer an advantage over conventional semiconductor materials and fabrication techniques as they do not require high temperatures or vacuum environments which are beneficial for fabricating devices on flexible, heat sensitive substrates.As the demand for low-cost and large-area flexible electronics increases, in part due to the rise of the internet of things (IoT), new routes in additive device fabrication techniques and advances inprintable materials are required. In this work, digital inkjet-printing in ambient atmosphere is proposed as a fabrication pathway for perovskite based flexible photodetectors in thin-film device architectures. The devices consisting of a printed methylammonium lead trihalide perovskite layer and a printed Spiro-OMeTAD hole transport layer fabricated on indium tin oxide (ITO) coated Polyethylene terephthalate (PET) flexible substrates are shown to have an average responsivity at 0 V bias of 7.7 μA/Win the range of 400 nm to 850 nm which is increased to 0.53 mA/Wand 1.17 mA/W when biases of 0.5 V and 1.0 V are applied, respectively.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
三卤化铅甲基铵钙钛矿基柔性光电器件的喷墨打印
近年来,金属-有机甲基铵三卤化铅钙钛矿配方作为活性材料被广泛研究并应用于一系列光伏和光电探测器器件中。钙钛矿基材料由于其独特的光电特性而受到欢迎,这些特性允许简单的器件架构在整个可见光光谱中达到高能量收集效率和响应性。这些材料提供了优于传统半导体材料和制造技术的优势,因为它们不需要高温或真空环境,这有利于在柔性热敏基板上制造器件。随着对低成本和大面积柔性电子产品的需求增加,部分原因是由于物联网(IoT)的兴起,增材设备制造技术的新路线和不可打印材料的进步是必要的。在这项工作中,提出了在环境气氛中数字喷墨印刷作为薄膜器件结构中基于钙钛矿的柔性光电探测器的制造途径。在氧化铟锡(ITO)包覆聚对苯二甲酸乙酯(PET)柔性衬底上制备的印刷三卤化铅甲基铵钙钛矿层和印刷Spiro-OMeTAD空穴传输层在400 ~ 850 nm范围内的平均响应率在0 V偏置下为7.7 μA/Win,在0.5 V和1.0 V偏置下分别增加到0.53 mA/W和1.17 mA/W。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Inkjet Printed Hybrid Organic-Quantum Dots Solar Cells: Effects of Pre- And Post-Printing Activities Fabrication and Performance Evaluation of Carbon-based Stretchable RFID Tags on Textile Substrates 0–3 Polymer/Barium Titanate Nano Structures Based Flexible Piezoelectric Film A Versatile Low Temperature Curing Molecular Silver Ink Platform for Printed Electronics Screen Printed Vias for a Flexible Energy Harvesting and Storage Module
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1