The growth and physical properties of HgCdMnZnTe: new material for IR photodetectors

Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004. Pub Date : 2004-01-01 DOI:10.1109/ICIMW.2004.1422140

I. Gorbatyuk, S. Ostapov, S. Dremlyuzhenko, I. Rarenko, R. Zaplitnyi, I. Fodchuk, N. Popenko, I. Ivanchenko, A. Zhigalov, S. Karelin

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Abstract

The monocrystals of new semiconductor solid solution Hg/sub 1-x-y-z/Cd/sub x/Mn/sub y/Zn/sub z/Te with the content of manganese and zinc up to 5% have been presented. X-ray and mechanical investigations of these crystals have been carried out and their basic electrophysical parameters such as the band-gap energy, the intrinsic carriers' concentration, the impurity concentration and activation energy, the mobility of charge carriers have been determined. It is shown that a new material has the perfect crystal structure and high stability of crystal lattice. The empirical formulas for calculations of band-gap energy and intrinsic carriers' concentration of monocrystals like that are suggested. The obtained data allow announcing this material as an alternative one for infrared detectors for 3-5 /spl mu/m and 8-14 /spl mu/m spectral ranges.

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红外探测器新材料HgCdMnZnTe的生长与物理性质

制备了锰、锌含量高达5%的新型半导体固溶体Hg/sub - 1-x-y-z/Cd/sub -x /Mn/sub -y /Zn/sub -z/ Te单晶。对这些晶体进行了x射线和力学研究，并测定了它们的基本电物理参数，如带隙能、本征载流子浓度、杂质浓度、活化能、载流子迁移率等。结果表明，该新材料具有完美的晶体结构和高的晶格稳定性。提出了计算单晶带隙能和单晶本征载流子浓度的经验公式。所获得的数据允许宣布该材料作为红外探测器的替代材料，光谱范围为3-5 /spl μ m和8-14 /spl μ m。

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Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.

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