D. Bätzner, J. Cardoso, C. Aeby, W. Frammelsberger, B. Strahm, P. Papet, B. Legradic, D. Lachenal, R. Kramer, T. Kössler, L. Andreetta, S. Pitteloud, N. Holm
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引用次数: 2
Abstract
When considering silicon heterojunction technology (HJT) for mass production the most frequently expressed reservations are related to the performance and cost constraints the standard TCO on the cell front side namely thin indium tin oxide (ITO) constitutes. We address these concerns with our HJT 2.0 concept in which the front electrode is made of a bi-layer of ITO that is supplemented by a silicon nitride (SiN) layer. This cell concept was developed to yield an increase in efficiency of typically 0.2% absolute due to improved cell current and a cost saving in the range of 30-40% with respect to cost of ownership (CoO).
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