Silicon 3D structuring by anodization Florea ^Craciunoiu

F. Craciunoiu, A. Dinescu, A. Bragaru
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Abstract

Silicon anodization is an electrochemical process, by which the silicon surface can be oxidized or etched or porosificated, depending on the process parameters. The process results are also depending on the silicon type and doping level. This work reveals the results of the anodization process for p type silicon wafers, having n type islands, with controlled junction width. By applying process techniques specific to p type silicon, it can be observed a silicon 3D structuring inside the diffusion area. So, it is marked the linear graded area specific to the p-n junctions.
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阳极氧化制备硅三维结构
硅阳极氧化是一种电化学过程,根据工艺参数的不同,硅表面可以被氧化、蚀刻或多孔化。工艺结果也取决于硅的类型和掺杂水平。这项工作揭示了具有n型岛的p型硅片的阳极氧化过程的结果,并控制结宽。通过应用p型硅特有的工艺技术,可以观察到扩散区内硅的三维结构。因此,它被标记为特定于pn结的线性梯度区域。
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