Ultra low-power DFF based shift registers design for CMOS image sensors applications

Q3 Arts and Humanities Giornale di Storia Costituzionale Pub Date : 2004-12-13 DOI:10.1109/ICECS.2004.1399766
A. Fish, Vladislav Mosheyev, Vitali Linkovsky, O. Yadid-Pecht
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引用次数: 7

Abstract

Various implementations of D-flip-flops (DFF) for shift register designs in CMOS image sensors are proposed. Driven by requirements of low-area and low-power dissipation, the presented FF allow implementation of power-efficient shift registers, used for signal readout control and windows of interest definition in CMOS image sensors and are optimized for operation at low frequencies. Power dissipation of the presented DFF is significantly reduced by leakage control using the stack effect. A variety of DFF and a shift-register, using the stacking effect approach, have been implemented in 0.18 /spl mu/m standard CMOS technology to compare the proposed DFF and shift-register structures with existing alternatives, showing an up to 63 % reduction in power dissipation of a shift-register at 30 Hz frequency. Operation of the proposed circuits is discussed and simulation results are reported.
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CMOS图像传感器应用的超低功耗DFF移位寄存器设计
提出了用于CMOS图像传感器移位寄存器设计的d触发器(DFF)的各种实现方法。在低面积和低功耗要求的驱动下,所提出的FF允许实现低功耗移位寄存器,用于CMOS图像传感器的信号读出控制和兴趣窗口定义,并针对低频工作进行了优化。利用堆栈效应控制泄漏,可以显著降低DFF的功耗。使用堆叠效应方法,在0.18 /spl mu/m标准CMOS技术中实现了各种DFF和移位寄存器,以比较所提出的DFF和移位寄存器结构与现有替代方案,显示移位寄存器在30 Hz频率下的功耗降低高达63%。讨论了所提电路的工作原理,并给出了仿真结果。
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Giornale di Storia Costituzionale
Giornale di Storia Costituzionale Arts and Humanities-History
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