A review of selected techniques for characterizing radiation-induced defects in solar cells

Abstract

A review of three promising defect characterization techniques is presented. It is shown how deep level transient spectroscopy can provide information about energy level, density and capture cross-section of electrically active defects produced by irradiation. Both Doppler and lifetime positron annihilation spectroscopies are reviewed to show how configuration of radiation-induced defects can be identified by these techniques. Finally, the electron paramagnetic resonance technique is briefly reviewed and its usefulness is demonstrated by describing the investigations of radiation-induced Si-A center and positively charged silicon vacancy defect.