Study on compatible CMOS-MEMS process with surface micromachining for the application of monolithic integration

D. Zhao, Xian Huang, Jun He, Li Zhang, Peng Liu, Fang Yang, Dacheng Zhang
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Abstract

In this work, compatible CMOS-MEMS process with surface micromachining is investigated. Surface micromachining method for cantilever fabrication has been merged with conventional CMOS process, and release of MEMS structure is conducted after CMOS process. We designed polysilicon MEMS structures as well as CMOS devices and circuits on a monolithic sensor chip for the investigation of the influence of stress induced by non-adequate post-CMOS annealing. The impact of step coverage and the releasing process on both the MEMS and CMOS components are also discussed.
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面向单片集成应用的表面微加工兼容CMOS-MEMS工艺研究
本文研究了与表面微加工兼容的CMOS-MEMS工艺。将表面微加工方法与传统的CMOS工艺相结合,在CMOS工艺之后进行MEMS结构的释放。我们在单片传感器芯片上设计了多晶硅MEMS结构以及CMOS器件和电路,以研究CMOS后退火不充分引起的应力的影响。讨论了阶跃覆盖和释放过程对MEMS和CMOS元件的影响。
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