Performance benchmarking of graphene nanoscroll transistor with 22nm MOSFET model

Abstract

Graphene Nanoscroll Field-Effect-Transistor (GNSFET) potential is assessed in replacing silicon as the next scaled transistor. The GNSFET is benchmarked with 22nm PTM model silicon MOSFET. The silicon MOSFET I-V characteristics were computed using HSpice Cadence tools. The charge distribution in GNSFET was characterized based on the Landauer Buttiker's formalism. The output current shows good agreement with the experimental results at constant conductance and GNS structural parameters. Subthreshold swing (SS), drain induced barrier lowering (DIBL), and on-off ratio, Ion/Ioff were extracted from both MOSFET and GNSFET in order to be analyzed in terms of their switching capability. Overall, the GNSFET seems to possess superior DIBL and SS despite lower Ion/Ioff ratio.