{"title":"Low-Pass Load Matching Network Design Using Dumbbell-Shaped DGS for High-Efficiency Microwave Power Amplifiers","authors":"V. Komarov, Oleksii Barybin, Y. Rassokhina","doi":"10.1109/UkrMiCo47782.2019.9165469","DOIUrl":null,"url":null,"abstract":"As an application example, microstrip line with integrated dumbbell-shaped defected ground structures (DGSs) is adopted in the output matching network (OMN) of a high-efficiency power amplifier (PA) of classes E, E/F, F-1 for size-reduction. Three ways to supply the power for the PA was considered. Two OMN design, prototypes, filter effects and performances are shown. Simulation with transistor model indicates a potential possibility to achieve up to 86.7% power added efficiency (PAE) for the E/F class at 42.92 dBm output power at 2.29 GHz operating frequency.","PeriodicalId":6754,"journal":{"name":"2019 International Conference on Information and Telecommunication Technologies and Radio Electronics (UkrMiCo)","volume":"34 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Information and Telecommunication Technologies and Radio Electronics (UkrMiCo)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/UkrMiCo47782.2019.9165469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
As an application example, microstrip line with integrated dumbbell-shaped defected ground structures (DGSs) is adopted in the output matching network (OMN) of a high-efficiency power amplifier (PA) of classes E, E/F, F-1 for size-reduction. Three ways to supply the power for the PA was considered. Two OMN design, prototypes, filter effects and performances are shown. Simulation with transistor model indicates a potential possibility to achieve up to 86.7% power added efficiency (PAE) for the E/F class at 42.92 dBm output power at 2.29 GHz operating frequency.
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