A. Fung, L. Samoska, J. Bowen, Steven Montanez, J. Kooi, M. Soriano, C. Jacobs, R. Manthena, D. Hoppe, A. Akgiray, R. Lai, X. Mei, M. Barsky
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引用次数: 1
Abstract
We report a new result of a packaged low noise amplifier (LNA) module with wide bandwidth of 5 to 35 GHz and low noise temperature performance of 10 -18 K, while operated at 10 K ambient. The LNA used 3-stages of sub-50 nm gate length, 100% indium channel content indium phosphide (InP) high electron mobility transistors (HEMTs). Wideband cryogenic LNAs are important for future radio astronomy observatories. To our knowledge these results represent the lowest noise achieved in a wideband amplifier from 5–35 GHz.
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