{"title":"Electronic properties of III-nitride materials and basics of III-nitride FETs","authors":"P. Asbeck","doi":"10.1016/bs.semsem.2019.08.013","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":13350,"journal":{"name":"III-Nitride Electronic Devices","volume":"90 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"III-Nitride Electronic Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1016/bs.semsem.2019.08.013","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
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