Study of Phase Formation In The Cute-As2te3System

Abstract

It is known that compounds and solid solutions based on arsenic chalcogenides occupy an important place among the materials used in optoelectronics [1-3]. Copper chalcogenides and alloys based on them as thermionic and superionic materials are widely used in radio and electronic engineering [4,5]. Some quasi-binary sections with the participation of arsenic chalcogenides and the Cu-As-Se (Te) ternary system have been investigated in the literature [6,7]. However, there is no data in the literature on interactions in the CuTe-As2Te3 system. The aim of this work is to synthesize and study the interaction in the CuTe-As2Te3 system, as well as to search for new semiconducting phases and solid solutions. The CuTe compound melts incongruently at 367 °C and crystallizes in a rhombic syngony with unit cell parameters: a= 3.16; b= 4.07; c= 6.92 Å, sp. gr. Pmmm-D2h [8]. According to [9], the CuTe compound melts incongruently at 400 °C. The As2Te3 compound melts with an open maximum at 381 °C and crystallizes in monoclinic syngony with lattice parameters: a= 14.339; b= 4.006; c= 9.873Å, β= 95°, sp.gr. C2/m, the density is ρ= 6.25g/cm3 [10]. Experimental Part