H. Dubey, L. Deshmukh, D. Kshirsagar, M. Sharon, M. Sharon
{"title":"Synthesis and Study of Electrical Properties of SbTeI","authors":"H. Dubey, L. Deshmukh, D. Kshirsagar, M. Sharon, M. Sharon","doi":"10.1155/2014/965350","DOIUrl":null,"url":null,"abstract":"Needle shaped SbTeI crystals were obtained by solid state reaction. Electrical resistance was measured in the temperature range of 4 K to 550 K. SbTeI shows a metallic behavior from 4 K to 300 K, and at higher temperature (>300 K), it shows semiconducting behavior. Unlike SbSI, this material shows almost zero resistance around 550 K. It shows a piezoelectric behavior with a capacitance of 717 pF and its carrier density and nobilities are found to be 2.12 × 1016 cm−3 and 1.01 cm2/(V·s), respectively. Crystals of SbTeI are characterized by XRD, SEM, and Raman analysis. Electrical activation energy is found to be 0.52 eV. It is suggested that this material may be studied for its application as a superconductor with Tc higher than room temperature.","PeriodicalId":7371,"journal":{"name":"Advances in Physical Chemistry","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advances in Physical Chemistry","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2014/965350","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Needle shaped SbTeI crystals were obtained by solid state reaction. Electrical resistance was measured in the temperature range of 4 K to 550 K. SbTeI shows a metallic behavior from 4 K to 300 K, and at higher temperature (>300 K), it shows semiconducting behavior. Unlike SbSI, this material shows almost zero resistance around 550 K. It shows a piezoelectric behavior with a capacitance of 717 pF and its carrier density and nobilities are found to be 2.12 × 1016 cm−3 and 1.01 cm2/(V·s), respectively. Crystals of SbTeI are characterized by XRD, SEM, and Raman analysis. Electrical activation energy is found to be 0.52 eV. It is suggested that this material may be studied for its application as a superconductor with Tc higher than room temperature.
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