Dan Sandström, M. Varonen, M. Kärkkäinen, K. Halonen
{"title":"A W-band 65nm CMOS transmitter front-end with 8GHz IF bandwidth and 20dB IR-ratio","authors":"Dan Sandström, M. Varonen, M. Kärkkäinen, K. Halonen","doi":"10.1109/ISSCC.2010.5433851","DOIUrl":null,"url":null,"abstract":"A W-band transmitter front-end has been implemented in 65 nm CMOS. The output power is higher than +4 dBm from 77 GHz to 94 GHz with an image rejection ratio from 15 dB to 25 dB. The highest 1 dB output compression point is +2.2 dBm with +6.6 dBm maximum power at 85 GHz. The transmitter draws 100 mA from a 1.2 V supply.","PeriodicalId":6418,"journal":{"name":"2010 IEEE International Solid-State Circuits Conference - (ISSCC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Solid-State Circuits Conference - (ISSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2010.5433851","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 21
Abstract
A W-band transmitter front-end has been implemented in 65 nm CMOS. The output power is higher than +4 dBm from 77 GHz to 94 GHz with an image rejection ratio from 15 dB to 25 dB. The highest 1 dB output compression point is +2.2 dBm with +6.6 dBm maximum power at 85 GHz. The transmitter draws 100 mA from a 1.2 V supply.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
