Magnetization reversal and switching field distribution in Co-Tb based bit patterned media

S. Srivastava, R. Hussain, T. Hauet, L. Piraux
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引用次数: 5

Abstract

We have fabricated ordered array of ferromagnetic nanodots, so-called nanobumps by depositing Ta(5nm)/Pt(5nm)/Co88Tb12(5nm)/Cu(2nm)/Pt(5nm) mutilayers onto the barrier layer of auto-assembled anodic alumina template with 100 nm period. The same multilayers was deposited on a flat Si/SiOx substrate (the so-called reference sample) for comparison. We used extraordinary Hall Effect (EHE) measurements to probe magnetization reversal mechanism and switching field distribution (SFD) of these two kinds of materials. The extraordinary Hall resistivity measurements were performed by a standard four-probe method. The measurement of the coercivity as a function of magnetic field angle with respect to the sample surface reveal that ferromagnetic nanodots follow Stoner-Wohlfarth model with a shallower variation, which is typical of a dot-by-dot reversal but with a nucleation/propagation process for each dot. On the other hand, multilayers deposited on flat substrate follow Kondorskey model, which indicate nucleation/ propagation type reversal. Finally, we have calculated switching field distribution for nanobump material.We have fabricated ordered array of ferromagnetic nanodots, so-called nanobumps by depositing Ta(5nm)/Pt(5nm)/Co88Tb12(5nm)/Cu(2nm)/Pt(5nm) mutilayers onto the barrier layer of auto-assembled anodic alumina template with 100 nm period. The same multilayers was deposited on a flat Si/SiOx substrate (the so-called reference sample) for comparison. We used extraordinary Hall Effect (EHE) measurements to probe magnetization reversal mechanism and switching field distribution (SFD) of these two kinds of materials. The extraordinary Hall resistivity measurements were performed by a standard four-probe method. The measurement of the coercivity as a function of magnetic field angle with respect to the sample surface reveal that ferromagnetic nanodots follow Stoner-Wohlfarth model with a shallower variation, which is typical of a dot-by-dot reversal but with a nucleation/propagation process for each dot. On the other hand, multilayers deposited on flat substrate follow Kondorskey model, which indicate nucleation/ ...
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基于Co-Tb的位模介质的磁化反转和开关场分布
我们将Ta(5nm)/Pt(5nm)/Co88Tb12(5nm)/Cu(2nm)/Pt(5nm)多层膜沉积在周期为100 nm的自动组装阳极氧化铝模板的阻挡层上,制备了有序排列的铁磁纳米点,即所谓的纳米凸点。将相同的多层膜沉积在平坦的Si/SiOx衬底(所谓的参考样品)上进行比较。我们利用特殊霍尔效应(EHE)测量方法来研究这两种材料的磁化反转机制和开关场分布(SFD)。非凡的霍尔电阻率测量是通过标准的四探头方法进行的。对磁阻角与样品表面的关系的测量表明,铁磁纳米点的矫顽力遵循Stoner-Wohlfarth模型,其变化较小,是典型的逐点反转,但每个点都有一个成核/扩展过程。另一方面,沉积在平面基底上的多层膜遵循Kondorskey模型,表现为成核/扩展型反转。最后,我们计算了纳米凹凸材料的开关场分布。我们将Ta(5nm)/Pt(5nm)/Co88Tb12(5nm)/Cu(2nm)/Pt(5nm)多层膜沉积在周期为100 nm的自动组装阳极氧化铝模板的阻挡层上,制备了有序排列的铁磁纳米点,即所谓的纳米凸点。将相同的多层膜沉积在平坦的Si/SiOx衬底(所谓的参考样品)上进行比较。我们利用特殊霍尔效应(EHE)测量方法来研究这两种材料的磁化反转机制和开关场分布(SFD)。非凡的霍尔电阻率测量是通过标准的四探头方法进行的。对磁阻角与样品表面的关系的测量表明,铁磁纳米点的矫顽力遵循Stoner-Wohlfarth模型,其变化较小,是典型的逐点反转,但每个点都有一个成核/扩展过程。另一方面,沉积在平面基底上的多层膜遵循Kondorskey模型,这表明成核/…
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