Workfunction engineering based Broken Gate TFET: modeling and simulation based theoretical analysis

Abstract

This paper explicates the essence of workfunction engineering scheme incorporated in Broken Gate (BG) Tunnel Field Effect Transistor (TFET) to alleviate the inherent problem of low ON current and ambipolar conduction of conventional TFET. Analytical modeling applying two dimensional Poisson's equation is presented here to derive the potential distribution and electric field profile of dual material BG TFET followed by drain current extraction based on Kane's model. Performance comparison of the proposed structure with its single material counterpart is made to validate the competency of workfunction engineered gate in overall improvement of device characteristics. The model based theoretical analysis is further substantiated by relevant ATLAS device simulated data, thereby establishing the accuracy of the derived model.