Memristor structure with the effect of switching resistance based on silicon nitride thin layers

F. Komarov, I. Romanov, L. Vlasukova, I. Parkhomenko, A. A. Tsivako, N. Kovalchuk
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Abstract

The electrophysical properties and the resistive switching effect of the ITO/SiNx/Si memristor structure were studied. A silicon nitride film with a thickness of ~200 nm with an inhomogeneous element depth distribution was deposited by low-pressure chemical vapor deposition. Based on the Rutherford backscattering data, it was shown that the concentration of excess silicon atoms in the SiNx film increases from 9 to 44 % when approaching the Si substrate. The analysis of the current-voltage characteristics of ITO/SiNx/Si structures revealed that the conduction mechanism in the high-resistance state is determined by the nitride film properties and is described by the Poole–Frenkel model taking into account the hopping model of electron transport between traps. Switching to the low-resistance state is probably caused by the migration of indium or tin ions from the ITO contact to the SiNx layer. The conduction of the ITO/SiNx/Si structure in the low-resistance state is determined by both the mechanisms of charge-carrier injection from the contact and charge-carrier transport through the dielectric layer. Reverse polarity results in destructing the conductive channel and switching the structure to the high-resistance state. The photo-switching effect was found for the ITO/SiNx/Si structure, which opens up new possibilities of using memristors in silicon optoelectronic systems.
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基于氮化硅薄层的开关电阻效应忆阻器结构
研究了ITO/SiNx/Si忆阻器结构的电物理特性和电阻开关效应。采用低压化学气相沉积方法制备了厚度约200 nm、元素深度分布不均匀的氮化硅薄膜。基于卢瑟福后向散射数据表明,当接近硅衬底时,SiNx薄膜中多余硅原子的浓度从9%增加到44%。对ITO/SiNx/Si结构的电流-电压特性分析表明,高阻态的传导机制是由氮化膜特性决定的,并采用考虑陷阱间电子传递跳变模型的Poole-Frenkel模型来描述。切换到低电阻状态可能是由铟或锡离子从ITO触点迁移到SiNx层引起的。ITO/SiNx/Si结构在低阻状态下的导通是由接触的载流子注入机制和介电层的载流子输运机制共同决定的。反极性会破坏导电通道并将结构切换到高电阻状态。发现了ITO/SiNx/Si结构的光开关效应,这为在硅光电系统中使用忆阻器开辟了新的可能性。
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