Masashi Yoshida, R. Ichiki, S. Kanazawa, S. Yamazaki, Noah Utsumi
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引用次数: 0
Abstract
Formation of aluminum nitride （ AlN ） films on aluminum surfaces has been achieved by an electric discharge process in liquid nitrogen in very short time. The thickness of the film produced by this process ranged 10 and 20 µ m for time varying between 0 . 12 and 1 . 2 ks. The film was composed of AlN and Aluminum ︲ Oxynitride （ AlON ） and was found to have a complex structure. The film hardness ranged from 778 to 2333 HV, and was affected by the micro defects such as cracks and voids, and the presence of AlON in the film. The hardness was enriched by the presence of AlON. ［ doi:10
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