Comparing PV simulation models and methods with outdoor measurements

S. Ransome
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引用次数: 15

Abstract

Several recent independent kWh/kWp studies have found similar energy yields (<±5%) for various c-Si and thin films without any consistent technology bias [1]. A comparison of various modelling methods such as the matrix method, 1 or 2 diode models, SV method and empirical equations has been performed to see how they predict PV performance. The values of thermal and low light level coefficients used in some simulation models have been found to be different from what is measured to IEC standards [2], [3], [4]. These discrepancies mean simulation programs often predict larger variations between technologies and usually favouring thin films [5]. Suggestions are made as to the best way to predict and validate system performance.
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光伏仿真模型和方法与室外测量的比较
最近几项独立的kWh/kWp研究发现,在没有任何一致的技术偏差[1]的情况下,各种c-Si和薄膜的能量产量相似(<±5%)。比较了各种建模方法,如矩阵法、1或2二极管模型、SV方法和经验方程,以了解它们如何预测PV性能。在一些模拟模型中使用的热和弱光系数值已被发现与IEC标准[2],[3],[4]的测量值不同。这些差异意味着模拟程序经常预测技术之间的较大差异,通常倾向于薄膜。提出了预测和验证系统性能的最佳方法。
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