Subset Sum in Time 2n/2/poly(n)

IF 1.3 4区 物理与天体物理 Q4 PHYSICS, APPLIED Spin Pub Date : 2023-01-17 DOI:10.48550/arXiv.2301.07134
Xi Chen, Yaonan Jin, Tim Randolph, R. Servedio
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Abstract

A major goal in the area of exact exponential algorithms is to give an algorithm for the (worst-case) $n$-input Subset Sum problem that runs in time $2^{(1/2 - c)n}$ for some constant $c>0$. In this paper we give a Subset Sum algorithm with worst-case running time $O(2^{n/2} \cdot n^{-\gamma})$ for a constant $\gamma>0.5023$ in standard word RAM or circuit RAM models. To the best of our knowledge, this is the first improvement on the classical ``meet-in-the-middle'' algorithm for worst-case Subset Sum, due to Horowitz and Sahni, which can be implemented in time $O(2^{n/2})$ in these memory models. Our algorithm combines a number of different techniques, including the ``representation method'' introduced by Howgrave-Graham and Joux and subsequent adaptations of the method in Austrin, Kaski, Koivisto, and Nederlof, and Nederlof and Wegrzycki, and ``bit-packing'' techniques used in the work of Baran, Demaine, and Patrascu on subquadratic algorithms for 3SUM.
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时间2n/2/poly(n)的子集和
精确指数算法领域的一个主要目标是给出(最坏情况下)$n$输入子集和问题的算法,该问题在时间$2^{(1/2 -c)n}$中运行,对于某个常数$c>0$。本文给出了在标准字RAM或电路RAM模型中,当常数$\gamma>0.5023$时,最坏情况下运行时间$O(2^{n/2} \cdot n^{-\gamma})$的子集和算法。据我们所知,这是对最坏情况子集和的经典“中间相遇”算法的第一次改进,由于Horowitz和Sahni,它可以在时间$O(2^{n/2})$中实现这些内存模型。我们的算法结合了许多不同的技术,包括Howgrave-Graham和Joux引入的“表示方法”,以及随后在Austrin、Kaski、Koivisto和Nederlof以及Nederlof和Wegrzycki中对该方法的改进,以及Baran、Demaine和Patrascu在3SUM的次二次算法中使用的“位打包”技术。
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来源期刊
Spin
Spin Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
2.10
自引率
11.10%
发文量
34
期刊介绍: Spin electronics encompasses a multidisciplinary research effort involving magnetism, semiconductor electronics, materials science, chemistry and biology. SPIN aims to provide a forum for the presentation of research and review articles of interest to all researchers in the field. The scope of the journal includes (but is not necessarily limited to) the following topics: *Materials: -Metals -Heusler compounds -Complex oxides: antiferromagnetic, ferromagnetic -Dilute magnetic semiconductors -Dilute magnetic oxides -High performance and emerging magnetic materials *Semiconductor electronics *Nanodevices: -Fabrication -Characterization *Spin injection *Spin transport *Spin transfer torque *Spin torque oscillators *Electrical control of magnetic properties *Organic spintronics *Optical phenomena and optoelectronic spin manipulation *Applications and devices: -Novel memories and logic devices -Lab-on-a-chip -Others *Fundamental and interdisciplinary studies: -Spin in low dimensional system -Spin in medical sciences -Spin in other fields -Computational materials discovery
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