{"title":"The ammonia sensitivity of PdIr alloy-gate mos field-effect transistor","authors":"Zhang Weixin, Zhao Lingjuan","doi":"10.1016/0250-6874(89)87069-6","DOIUrl":null,"url":null,"abstract":"<div><p>A new ammonia-sensitive MOSFET based on the use of a sputtered PdIr alloy gate has been developed. The sensitivity and selectivity of this device are compared with the data reported by others. It is shown that the PdIr alloy-gate MOSFETs have a good selectivity for ammonia.</p></div>","PeriodicalId":101159,"journal":{"name":"Sensors and Actuators","volume":"19 2","pages":"Pages 177-181"},"PeriodicalIF":0.0000,"publicationDate":"1989-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0250-6874(89)87069-6","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0250687489870696","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A new ammonia-sensitive MOSFET based on the use of a sputtered PdIr alloy gate has been developed. The sensitivity and selectivity of this device are compared with the data reported by others. It is shown that the PdIr alloy-gate MOSFETs have a good selectivity for ammonia.
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