Study of stability of 2D boron arsenide in air at atomic level

Pushkar Mishra, Deobrat Singh, Y. Sonvane, Sanjeev K. Gupta
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Abstract

2D monolayer BAs system has very interesting properties due to high thermal conductivity and bipolar magnetic property which is good candidates for spintronic devices. 2D BAs based electronic device however, are found to degrade upon exposure to air. In this paper, we have discussed the stability of atomic level of 2D BAs system in the terms of its interaction with oxygen (O2) molecule. Our calculations based on density functional theory suggest that the O2 molecule could spontaneously dissociate on the surface of monolayer BAs system. During the dissociation process it shows exothermic reaction and exothermic energy is 2.60 eV. The electronic band gap without and with O2 molecule are 0.77 eV and 0.68 eV with direct band gap. From the optical study it is found that, in pure BAs the higher absorption of photon energy in UV region but in oxygen adsorbed BAs higher absorption of photon energy shifted in IR as well as visible region. According to that, oxidized surface of monolayer BAs based electronic devices is slightly degradation in air.2D monolayer BAs system has very interesting properties due to high thermal conductivity and bipolar magnetic property which is good candidates for spintronic devices. 2D BAs based electronic device however, are found to degrade upon exposure to air. In this paper, we have discussed the stability of atomic level of 2D BAs system in the terms of its interaction with oxygen (O2) molecule. Our calculations based on density functional theory suggest that the O2 molecule could spontaneously dissociate on the surface of monolayer BAs system. During the dissociation process it shows exothermic reaction and exothermic energy is 2.60 eV. The electronic band gap without and with O2 molecule are 0.77 eV and 0.68 eV with direct band gap. From the optical study it is found that, in pure BAs the higher absorption of photon energy in UV region but in oxygen adsorbed BAs higher absorption of photon energy shifted in IR as well as visible region. According to that, oxidized surface of monolayer BAs based electronic device...
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二维砷化硼在空气中的原子稳定性研究
由于高导热性和双极磁性,二维单层BAs系统具有非常有趣的性能,是自旋电子器件的良好候选者。然而,基于2D ba的电子设备在暴露于空气中时会降解。本文从与氧分子相互作用的角度讨论了二维BAs体系原子能级的稳定性。我们基于密度泛函理论的计算表明,氧分子可以在单层BAs系统表面自发解离。在解离过程中发生放热反应,放热能量为2.60 eV。有O2分子和无O2分子的电子带隙分别为0.77 eV和0.68 eV。从光学研究中发现,纯BAs在紫外区吸收光子能量较高,而氧吸附的BAs在红外区和可见光区吸收光子能量位移较高。由此可见,单层碱基电子器件的氧化表面在空气中有轻微的降解。由于高导热性和双极磁性,二维单层BAs系统具有非常有趣的性能,是自旋电子器件的良好候选者。然而,基于2D ba的电子设备在暴露于空气中时会降解。本文从与氧分子相互作用的角度讨论了二维BAs体系原子能级的稳定性。我们基于密度泛函理论的计算表明,氧分子可以在单层BAs系统表面自发解离。在解离过程中发生放热反应,放热能量为2.60 eV。有O2分子和无O2分子的电子带隙分别为0.77 eV和0.68 eV。从光学研究中发现,纯BAs在紫外区吸收光子能量较高,而氧吸附的BAs在红外区和可见光区吸收光子能量位移较高。在此基础上,制备了单层碱基电子器件的氧化表面。
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