Evaluation of SiC MOSFETs for Solid State Circuit Breakers in DC Distribution Applications

Abstract

Solid state circuit breakers (SSCBs) employ power semiconductor devices to provide fast fault current interruption (in the microsecond range) in a compact and reliable package. SiC power MOSFETs are an attractive option for SSCBs offering low conduction losses for improved overall efficiency. This paper presents an evaluation of SiC MOSFETs to explore their capabilities and potential limiting factors for SSCBs in dc distribution applications. To this end, surge current experiments are performed using a prototype to investigate the circuit operation during fault transients. Design considerations for the SSCB system including SiC MOSFET and voltage clamping circuit are developed expected to aid in the design and construction of SiC-based SSCB units.