Computer Modelling of Influence of Crystal Lattice Friction Stress on the Dislocation Annihilation Process

K. Borysovska
{"title":"Computer Modelling of Influence of Crystal Lattice Friction Stress on the Dislocation Annihilation Process","authors":"K. Borysovska","doi":"10.4028/p-hpu55n","DOIUrl":null,"url":null,"abstract":"In this paper the effect of lattice friction stress on the process of dislocations annihilation is considered using dislocation dynamics method. It is shown that if dislocations of the opposite sign are located in the area where their own tension is greater than the friction stress, they annihilate. Consideration of this fact allows to connect the microscopic processes of annihilation with evolution of dislocation density in the sample under small external stresses and unloading. The area in which annihilation occurs is calculated to be proportional to the square of the friction stress/shear modulus ratio.It is also shown that the parameter responsible for the rate of dislocation annihilation depends on the cube of the ratio of the friction stress to the shear modulus, because it is inversely proportional to the number of annihilating dislocations and the time in which a dislocation pair annihilates.","PeriodicalId":7271,"journal":{"name":"Advanced Materials Research","volume":"55 1","pages":"31 - 43"},"PeriodicalIF":0.0000,"publicationDate":"2023-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials Research","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.4028/p-hpu55n","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

In this paper the effect of lattice friction stress on the process of dislocations annihilation is considered using dislocation dynamics method. It is shown that if dislocations of the opposite sign are located in the area where their own tension is greater than the friction stress, they annihilate. Consideration of this fact allows to connect the microscopic processes of annihilation with evolution of dislocation density in the sample under small external stresses and unloading. The area in which annihilation occurs is calculated to be proportional to the square of the friction stress/shear modulus ratio.It is also shown that the parameter responsible for the rate of dislocation annihilation depends on the cube of the ratio of the friction stress to the shear modulus, because it is inversely proportional to the number of annihilating dislocations and the time in which a dislocation pair annihilates.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
晶格摩擦应力对位错湮灭过程影响的计算机模拟
本文用位错动力学方法研究了晶格摩擦应力对位错湮灭过程的影响。结果表明,如果相反符号的位错位于其本身的张力大于摩擦应力的区域,则它们会湮灭。考虑到这一事实,可以将微观湮灭过程与小外应力和卸载下样品中位错密度的演变联系起来。湮灭发生的面积与摩擦应力/剪切模量比的平方成正比。还表明,位错湮灭率的参数取决于摩擦应力与剪切模量之比的立方,因为它与湮灭位错的数量和位错对湮灭的时间成反比。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
The Effect of Molar Ratio and Precipitation Time of Mg/Al Hydrotalcite Synthesis on the Isomerization of Glucose into Fructose Biomaterials and Structural Materials Solid Propellant Aging Detection Method Based on Impedance Spectroscopy Exploring the Potential of α-MnO2/ Carbon Nanotubes for Improved Oxygen Reduction Reaction Performance at the Cathode of Alkaline Fuel Cells Effect of Flame Remelting on the Microstructure, Wear and Corrosion Resistance of HVOF Sprayed NiCrBSi Coatings
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1