Solution processed flexible photodiode based on poly(3-hexylthiophene):graphene composite

DAE SOLID STATE PHYSICS SYMPOSIUM 2018 Pub Date : 2019-07-12 DOI:10.1063/1.5113057

A. Yadav, Aditi Upadhyaya, S. Gupta, A. Verma, C. Negi

{"title":"Solution processed flexible photodiode based on poly(3-hexylthiophene):graphene composite","authors":"A. Yadav, Aditi Upadhyaya, S. Gupta, A. Verma, C. Negi","doi":"10.1063/1.5113057","DOIUrl":null,"url":null,"abstract":"The polymer-carbon nanocomposites have achieved a remarkable progress over the past years. Their unique electrical and optical properties have attracted the attention for photovoltaic and optoelectronic devices. Therefore, in this paper we report fabrication of P3HT:graphene nanocomposite based photodiode with the architecture PET/ITO/P3HT:graphene/Al on Indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) substrate. The measured current-voltage (I-V) characteristics of the fabricated device under dark condition were found to be similar to the Schottky diode. Various crucial diode parameters, such as ideality factor, barrier height, series resistance etc., have been estimated in the backdrop of Shockley model. The double logarithmic J-V characteristic analysis was carried out to determine the charge transport properties. Moreover, the device offers a good photoconductive behavior, which shows potential of graphene/polymer composite for development of flexible photovoltaic and optoelectronic devices.The polymer-carbon nanocomposites have achieved a remarkable progress over the past years. Their unique electrical and optical properties have attracted the attention for photovoltaic and optoelectronic devices. Therefore, in this paper we report fabrication of P3HT:graphene nanocomposite based photodiode with the architecture PET/ITO/P3HT:graphene/Al on Indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) substrate. The measured current-voltage (I-V) characteristics of the fabricated device under dark condition were found to be similar to the Schottky diode. Various crucial diode parameters, such as ideality factor, barrier height, series resistance etc., have been estimated in the backdrop of Shockley model. The double logarithmic J-V characteristic analysis was carried out to determine the charge transport properties. Moreover, the device offers a good photoconductive behavior, which shows potential of graphene/polymer composite for development of flexible photovoltaic and optoelectr...","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"353 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.5113057","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

Abstract

The polymer-carbon nanocomposites have achieved a remarkable progress over the past years. Their unique electrical and optical properties have attracted the attention for photovoltaic and optoelectronic devices. Therefore, in this paper we report fabrication of P3HT:graphene nanocomposite based photodiode with the architecture PET/ITO/P3HT:graphene/Al on Indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) substrate. The measured current-voltage (I-V) characteristics of the fabricated device under dark condition were found to be similar to the Schottky diode. Various crucial diode parameters, such as ideality factor, barrier height, series resistance etc., have been estimated in the backdrop of Shockley model. The double logarithmic J-V characteristic analysis was carried out to determine the charge transport properties. Moreover, the device offers a good photoconductive behavior, which shows potential of graphene/polymer composite for development of flexible photovoltaic and optoelectronic devices.The polymer-carbon nanocomposites have achieved a remarkable progress over the past years. Their unique electrical and optical properties have attracted the attention for photovoltaic and optoelectronic devices. Therefore, in this paper we report fabrication of P3HT:graphene nanocomposite based photodiode with the architecture PET/ITO/P3HT:graphene/Al on Indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) substrate. The measured current-voltage (I-V) characteristics of the fabricated device under dark condition were found to be similar to the Schottky diode. Various crucial diode parameters, such as ideality factor, barrier height, series resistance etc., have been estimated in the backdrop of Shockley model. The double logarithmic J-V characteristic analysis was carried out to determine the charge transport properties. Moreover, the device offers a good photoconductive behavior, which shows potential of graphene/polymer composite for development of flexible photovoltaic and optoelectr...

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基于聚(3-己基噻吩):石墨烯复合材料的溶液加工柔性光电二极管

聚合物-碳纳米复合材料在过去的几年里取得了显著的进展。其独特的电学和光学特性引起了光伏和光电子器件的关注。因此，本文报道了在氧化铟锡(ITO)涂层的柔性聚对苯二甲酸乙二醇酯(PET)衬底上制备PET/ITO/P3HT:石墨烯/Al结构的P3HT:石墨烯纳米复合光电二极管。在黑暗条件下所测得的器件的电流-电压(I-V)特性与肖特基二极管相似。在肖克利模型的背景下，对理想因数、势垒高度、串联电阻等关键二极管参数进行了估计。采用双对数J-V特性分析来确定电荷输运性质。此外，该器件具有良好的光导性能，显示了石墨烯/聚合物复合材料在柔性光伏和光电子器件开发中的潜力。聚合物-碳纳米复合材料在过去的几年里取得了显著的进展。其独特的电学和光学特性引起了光伏和光电子器件的关注。因此，本文报道了在氧化铟锡(ITO)涂层的柔性聚对苯二甲酸乙二醇酯(PET)衬底上制备PET/ITO/P3HT:石墨烯/Al结构的P3HT:石墨烯纳米复合光电二极管。在黑暗条件下所测得的器件的电流-电压(I-V)特性与肖特基二极管相似。在肖克利模型的背景下，对理想因数、势垒高度、串联电阻等关键二极管参数进行了估计。采用双对数J-V特性分析来确定电荷输运性质。此外，该器件还具有良好的光导性能，显示了石墨烯/聚合物复合材料在柔性光伏光电器件开发中的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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DAE SOLID STATE PHYSICS SYMPOSIUM 2018

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