Modeling and Investigation of Electronic Transport Properties of Boron or Nitrogen Substitution Doped Single Layer Graphene

Abstract

The key electronic property - interaction parameter $(r_{s})$ for boron (B) or nitrogen (N) substitution doped single layer graphene is analytically modeled. Further, the interaction parameter paves a route to explore the vital transport properties such as scattering time $(\tau)$, conductivity $(\sigma)$, and mobility $(\mu)$, which have been investigated for B/N substitution doped graphene in this work. The interaction parameter for undoped pristine single layer graphene is constant and independent of carrier density and depends only on the dielectric constant of the substrate material. On the other hand, the interaction parameter for B/N substitution doped graphene is extensively influenced by shifting of Dirac point, non-zero bandgap due to dopant and carrier density. From the transport properties, it has been predicted that B/N substitution doped graphene exhibits significant asymmetric electronic transport behaviour in both electrons and holes rather symmetric in pristine graphene. Consequently, substitution doping in graphene suppresses ambipolar characteristics and highly leading to enhance the ON/OFF ratio. Also, the electronic and transport properties are the essential quantities of interest while modeling the low-dimensional devices. Therefore, investigation of electronic transport properties of B/N substitution doped graphene reveals more insights in the device modeling of doped graphene in field-effect device applications.