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2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC)最新文献

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Investigation of Temperature Variation on a HSO Ferroelectric FDSOI NCFET HSO铁电FDSOI NCFET的温度变化研究
Pub Date : 2021-12-12 DOI: 10.1109/NMDC50713.2021.9677472
R. Shaik, K. P. Pradhan
In this work, temperature effect on MFMIS type FDSOI NCFET is investigated considering a well known thin film ferroelectric material HSO (Silicon doped HfO2). The current investigations are performed in a TCAD environment where the underlying gate charge is obtained using TCAD simulation to computing ferro voltage across the HSO ferroelectric capacitor to find the total gate voltage in the gate-stack. The extracted values are then investigated for a non-hysteric operation while varying ferroelectric thickness $(mathrm{T}_{F})$ to predict the optimum $mathrm{T}_{F}$ of HSO ferroelectric. The optimum HSO type MFMIS NCFET has been subjected to variation in temperature to predict the electrical performance of the device under harsh environments. It is observed that the HSO type MFMIS NCFET predicts improvement in sub-threshold slope (SS) and amplification factor $(mathrm{A}_{V})$ at operating temperatures reduced significantly lower than the ferroelectric Curie temperature whereas the device tends to show slight deterioration in SS and $mathrm{A}_{V}$ when the operating temperature approaches the Curie temperature.
在这项工作中,考虑到众所周知的薄膜铁电材料HSO(硅掺杂HfO2),研究了温度对MFMIS型FDSOI NCFET的影响。目前的研究是在TCAD环境中进行的,通过TCAD模拟计算HSO铁电电容器上的铁电压来获得潜在的栅极电荷,从而找到栅极堆栈中的总栅极电压。然后在改变铁电厚度$( mathm {T}_{F})$的情况下,对提取的值进行非滞后操作,以预测HSO铁电的最佳$ mathm {T}_{F}$。最佳的HSO型MFMIS NCFET已经受到温度变化的影响,以预测设备在恶劣环境下的电气性能。观察到HSO型MFMIS NCFET在明显低于铁电居里温度的工作温度下,亚阈值斜率(SS)和放大因子$( mathm {A}_{V})$有改善,而当工作温度接近居里温度时,器件的SS和$ mathm {A}_{V}$有轻微的恶化。
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引用次数: 5
High-Resolution Imaging of Ultrasound in Dielectric Materials using Near-Field Scanning Optical Microscopy 近场扫描光学显微镜在介质材料中的高分辨率超声成像
Pub Date : 2021-12-12 DOI: 10.1109/NMDC50713.2021.9677473
J. Spicer
In this work, models for scanning near-field optical probes based on dipole radiators are developed for representing the behaviors of these probes for high resolution detection of ultrasound in dielectric materials. The simplest case considered uses a vertically-oriented electric dipole radiator that is located a distance above a surface being displaced by ultrasound. The relatively high symmetry of this model geometry permits analytical representation of the fields radiated by the dipole including those associated with interactions with the material surface. The amplitude and the phase of the directly-reflected and the lateral wave fields depend on the material properties and on the distance of the dipole above the surface. When combined with the direct field, these fields coherently interfere to produce a radiation pattern above the surface that includes information about surface displacements associated with ultrasonic arrivals. In particular, the optical power radiated into the far-field can be monitored and used for ultrasound detection. Expressions for the radiated power are developed that include the dependence on material properties and explicitly show the contributions of the directly-reflected and lateral wavefields. These expressions are particularly simple when the material has limiting values of either electrical conductivity or dielectric permittivity, but the focus of the current work is on materials that cannot be described by these extreme property limits. Consideration of the general case permits a broader exploration of the ultrasonic signals that would be produced in these types of systems. This work examines the sensitivity of near-field probes to ultrasonic displacements and provides guidance on approaches to optimization of ultrasound detection using these types of probes.
在这项工作中,建立了基于偶极子辐射体的扫描近场光学探头模型,用于表征这些探头在介质材料中高分辨率超声检测的行为。考虑的最简单的情况是使用垂直定向的电偶极子散热器,该散热器位于被超声波置换的表面上方一段距离。该模型几何的相对高对称性允许对偶极子辐射的场进行解析表示,包括与材料表面相互作用相关的场。直接反射波场和横向波场的振幅和相位取决于材料的性质和偶极子离表面的距离。当与直接场结合时,这些场相干干涉在表面上方产生辐射图案,其中包括与超声波到达相关的表面位移信息。特别是,辐射到远场的光功率可以被监测并用于超声波检测。建立了辐射功率的表达式,包括对材料特性的依赖,并明确地显示了直接反射波场和侧向波场的贡献。当材料具有电导率或介电常数的限制值时,这些表达式特别简单,但当前工作的重点是不能用这些极端性质限制来描述的材料。考虑到一般情况,可以更广泛地探索在这些类型的系统中产生的超声波信号。这项工作检查了近场探头对超声位移的灵敏度,并提供了使用这些类型的探头优化超声检测方法的指导。
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引用次数: 0
Making ultra-active antimicrobial copper possible through surface area enhancement 通过表面积增强使超活性抗菌铜成为可能
Pub Date : 2021-12-12 DOI: 10.1109/NMDC50713.2021.9677495
A. Zinn, Rachel L. Brody, M. Izadjoo, R. Roth, R. Stoltenberg
Copper has been used throughout history for its antimicrobial capacity; long before any mechanisms were understood it was folk medicine. Today, there are over 500 copper alloys registered with the EPA for their proven antipathogenic capabilities. These materials are unique compared to traditional disinfectants because of their broadband activity, longevity and ability to self-sterilize. They have significant potential in healthcare, industrial, and commercial settings because they are non-specific and able to kill all pathogens tested thus far. However, in the past they have been hindered by their action timeline; conventionally available bulk coppers are highly oxidized and frequently have very low surface areas. We have developed a novel copper configuration that remains unoxidized and possesses an extremely high surface area, thus making it ultra-active against pathogens. The testing we have done makes a very promising case for our copper, ActiveCopper, to be used in settings that experience frequent contact and need to be disinfected frequently. It eliminates infectious agents in less than a minute and retains that ability for years. In this paper we explore the possible mechanisms behind its unprecedented action and exhibit our analyses of its characteristics.
铜因其抗菌能力在历史上一直被使用;早在任何机制被理解之前,它就是民间医学。今天,有超过500种铜合金因其抗致病性而在EPA注册。与传统消毒剂相比,这些材料是独一无二的,因为它们具有宽带活性、寿命长和自消毒能力。它们在医疗保健、工业和商业环境中具有巨大的潜力,因为它们是非特异性的,并且能够杀死迄今为止测试过的所有病原体。然而,在过去,它们受到行动时间表的阻碍;传统上可用的大块铜是高度氧化的,通常具有非常低的表面积。我们已经开发出一种新的铜结构,它保持未氧化,具有极高的表面积,从而使其对病原体具有超强的活性。我们所做的测试为我们的铜材料activeccopper提供了一个非常有希望的案例,它可以用于频繁接触并需要经常消毒的环境。它可以在不到一分钟的时间内消除传染性病原体,并保持这种能力数年。本文探讨了其前所未有的行为背后的可能机制,并对其特征进行了分析。
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引用次数: 0
Protein interaction with SiO2 and AgNPs: from adsorption on solid surfaces to organization and conformational changes 蛋白质与SiO2和AgNPs的相互作用:从固体表面的吸附到组织和构象的变化
Pub Date : 2021-12-12 DOI: 10.1109/NMDC50713.2021.9677562
M. Soumbo, C. Villeneuve-Faure, C. Bonafos, C. Roques, K. Makasheva
Driven by many applications, the development of new biomaterials has considerably increased in the last decade. The current research strategies also involve revealing of the relationship between protein structure and function due to the exposure and interaction of proteins with non-biological organic and inorganic solid surfaces. Aiming at understanding of the mechanisms of protein adsorption on solid surfaces we follow in this work the organization dynamics of proteins (Bovine Serum Albumin, BSA and Fibronectin, Fn) adsorbed on thin silica layers without or with silver nanoparticles (AgNPs), deposited on their surfaces. It is found that although starting with the same protein concentration in solution (0.05 g/L), the adsorbed amount of proteins on SiO2 surfaces is twice larger for Fn $(1.32 mu mathrm{g}/text{cm}^{2})$ compared to BSA $(0.58 mu mathrm{g}/text{cm}^{2})$. The proteins adopt different conformations according to the surface pattern. On a flat SiO2 surface, the BSA proteins organize in a lace-like network while the Fn proteins adopt a branching-type. The patterned by AgNPs surfaces induce conformational changes of the proteins. In interaction with AgNPs both types of proteins fold up to attain mainly compact globular conformation.
在许多应用的推动下,新型生物材料的发展在过去十年中有了显著的增长。由于蛋白质与非生物有机和无机固体表面的暴露和相互作用,目前的研究策略还涉及揭示蛋白质结构和功能之间的关系。为了了解蛋白质在固体表面的吸附机制,我们在这项工作中跟踪了蛋白质(牛血清白蛋白,BSA和纤维连接蛋白,Fn)吸附在薄二氧化硅层上的组织动力学,没有或有银纳米颗粒(AgNPs)沉积在它们的表面。结果表明,虽然溶液中蛋白质浓度相同(0.05 g/L),但Fn $(1.32 mu mathrm{g}/text{cm}^{2})$在SiO2表面上吸附的蛋白质量是BSA $(0.58 mu mathrm{g}/text{cm}^{2})$的两倍。蛋白质根据表面形态采取不同的构象。在平坦的SiO2表面,BSA蛋白呈网状结构,而Fn蛋白呈支链结构。AgNPs表面的图案诱导了蛋白质的构象变化。在与AgNPs的相互作用中,这两种类型的蛋白质折叠起来以获得主要致密的球状构象。
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引用次数: 0
Analysis, Modelling and Applications of Ferroelectric Negative Capacitanceincorporated 2D Semiconductor Field Effect Transistors 含二维半导体场效应晶体管的铁电负电容分析、建模及应用
Pub Date : 2021-12-12 DOI: 10.1109/nmdc50713.2021.9677518
Guangchao Zhao, Xingli Wang, Mingqiang Huang, B. Tay
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引用次数: 0
Self-Assembled Organometallic Molecular Wires in Single Molecule Circuits 单分子电路中自组装有机金属分子线
Pub Date : 2021-12-12 DOI: 10.1109/nmdc50713.2021.9677552
M. Kamenetska
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引用次数: 0
Workshop and Tutorial [2 abstracts] 工作坊及教程[2摘要]
Pub Date : 2021-12-12 DOI: 10.1109/nmdc50713.2021.9677482
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引用次数: 0
Influence of electrodes nature on the electrical characteristics of spark discharges in water 电极性质对水中火花放电电学特性的影响
Pub Date : 2021-12-12 DOI: 10.1109/NMDC50713.2021.9677532
A. Dorval, Naomi Bourbeau, K. Géraud, F. Valensi, A. Hamdan
Discharge in dielectric liquid is a field of research involved in many applications. Here, we study the influence of electrode material on the electrical characteristics of discharges in distilled water. For a given electrode material, the discharges are run continuously (at 5 Hz) until they fail to occur. Voltage and current waveforms of each discharge are recorded and processed, using an algorithm, to determine the probability of discharge occurrence, breakdown voltage, discharge current, and discharge delay. Anode erosion rate was also determined, and its dependence on the physical properties of the material, such as melting temperature and Young's modulus, is discussed.
介质液体放电是一个涉及许多应用领域的研究领域。本文研究了电极材料对蒸馏水放电特性的影响。对于给定的电极材料,放电连续运行(在5赫兹),直到他们没有发生。对每次放电的电压和电流波形进行记录和处理,通过算法确定放电发生的概率、击穿电压、放电电流和放电延时。测定了阳极腐蚀速率,并讨论了阳极腐蚀速率与材料物理性能的关系,如熔化温度和杨氏模量。
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引用次数: 0
2D RRAM and Verilog-A model for Neuromorphic Computing 神经形态计算的二维RRAM和Verilog-A模型
Pub Date : 2021-12-12 DOI: 10.1109/NMDC50713.2021.9677559
Yifu Huang, Xiaohan Wu, Yuqian Gu, Ruijing Ge, Jiahan Zhang, Yao‐Feng Chang, D. Akinwande, Jack C. Lee
Resistive random-access memory (RRAM) has become one of the most promising devices for emerging non-volatile memory and brain-inspired neuromorphic computing applications. As a two-dimensional material, monolayer rhenium diselenide (ReSe2) has been reported to exhibit non-volatile resistive switching (NVRS) phenomenon and applied in RRAM devices. In this work, a ReSe2-based RRAM device is proposed. Multi-step resistive switching behavior is observed under DC sweep. By applying proper pulse stimulus, it has been demonstrated that the proposed device exhibits long-term potentiation and depression (LTP/LTD), which is implemented in a Verilog-A model for the purpose of circuit-level simulation.
电阻式随机存取存储器(RRAM)已成为新兴的非易失性存储器和脑启发神经形态计算应用中最有前途的器件之一。作为一种二维材料,单层二硒化铼(ReSe2)已被报道表现出非易失性电阻开关(NVRS)现象,并应用于RRAM器件。在这项工作中,提出了一个基于rese2的RRAM器件。在直流扫频下观察到多阶电阻开关行为。通过施加适当的脉冲刺激,已证明所提出的器件具有长期增强和抑制(LTP/LTD),并在Verilog-A模型中实现,用于电路级仿真。
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引用次数: 1
Sponsors & Exhibitors Exhibits, Patrons and Sponsors 赞助商和参展商展品,赞助人和赞助商
Pub Date : 2021-12-12 DOI: 10.1109/nmdc50713.2021.9677550
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引用次数: 0
期刊
2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC)
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