Stress-Relaxed AlN-Buffer-Oriented GaN-Nano-Obelisks-Based High-Performance UV Photodetector

Pargam Vashishtha, Pukhraj Prajapat, Lalit N. Goswami, Aditya V. Yadav, A. Pandey, G. Gupta
{"title":"Stress-Relaxed AlN-Buffer-Oriented GaN-Nano-Obelisks-Based High-Performance UV Photodetector","authors":"Pargam Vashishtha, Pukhraj Prajapat, Lalit N. Goswami, Aditya V. Yadav, A. Pandey, G. Gupta","doi":"10.3390/electronicmat3040029","DOIUrl":null,"url":null,"abstract":"Epitaxial GaN nanostructures are developed, and the influence of the AlN buffer layer (temperature modulation) on material characteristics and optoelectronic device application is assessed. The AlN buffer layer was grown on a Si (111) substrate at varying temperatures (770–830 °C), followed by GaN growth using plasma-assisted molecular beam epitaxy. The investigation revealed that the comparatively lower temperature AlN buffer layer was responsible for stress and lattice strain relaxation and was realized as the GaN nano-obelisk structures. Contrarily, the increased temperature of the AlN growth led to the formation of GaN nanopyramidal and nanowax/wane structures. These grown GaN/AlN/Si heterostructures were utilized to develop photodetectors in a metal–semiconductor–metal geometry format. The performance of these fabricated optoelectronic devices was examined under ultraviolet illumination (UVA), where the GaN nano-obelisks-based device attained the highest responsivity of 118 AW−1. Under UVA (325 nm) illumination, the designed device exhibited a high detectivity of 1 × 1010 Jones, noise equivalent power of 1 × 10−12 WHz−1/2, and external quantum efficiency of 45,000%. The analysis revealed that the quality of the AlN buffer layer significantly improved the optoelectronic performance of the device.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"30 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Modern Electronic Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3390/electronicmat3040029","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16

Abstract

Epitaxial GaN nanostructures are developed, and the influence of the AlN buffer layer (temperature modulation) on material characteristics and optoelectronic device application is assessed. The AlN buffer layer was grown on a Si (111) substrate at varying temperatures (770–830 °C), followed by GaN growth using plasma-assisted molecular beam epitaxy. The investigation revealed that the comparatively lower temperature AlN buffer layer was responsible for stress and lattice strain relaxation and was realized as the GaN nano-obelisk structures. Contrarily, the increased temperature of the AlN growth led to the formation of GaN nanopyramidal and nanowax/wane structures. These grown GaN/AlN/Si heterostructures were utilized to develop photodetectors in a metal–semiconductor–metal geometry format. The performance of these fabricated optoelectronic devices was examined under ultraviolet illumination (UVA), where the GaN nano-obelisks-based device attained the highest responsivity of 118 AW−1. Under UVA (325 nm) illumination, the designed device exhibited a high detectivity of 1 × 1010 Jones, noise equivalent power of 1 × 10−12 WHz−1/2, and external quantum efficiency of 45,000%. The analysis revealed that the quality of the AlN buffer layer significantly improved the optoelectronic performance of the device.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
应力松弛aln缓冲导向gan纳米方尖碑型高性能紫外光电探测器
开发了外延GaN纳米结构,并评估了AlN缓冲层(温度调制)对材料特性和光电子器件应用的影响。在不同温度(770-830℃)下,在Si(111)衬底上生长AlN缓冲层,然后使用等离子体辅助分子束外延生长GaN。研究表明,相对低温的AlN缓冲层负责应力松弛和晶格应变松弛,并实现GaN纳米方尖碑结构。相反,AlN生长温度的升高导致GaN纳米锥体结构和纳米蜡/衰减结构的形成。这些生长的GaN/AlN/Si异质结构被用于开发金属-半导体-金属几何格式的光电探测器。在紫外线照射下测试了这些制备的光电器件的性能,其中基于GaN纳米方尖碑的器件达到了最高的响应度,为118 AW−1。在UVA (325 nm)光照下,该器件的检出率为1 × 1010 Jones,噪声等效功率为1 × 10−12 WHz−1/2,外量子效率为45000%。分析表明,AlN缓冲层的质量显著提高了器件的光电性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
CiteScore
0.60
自引率
0.00%
发文量
0
期刊最新文献
Synaptic behavior of a composite multiferroic heterostructure FeBSiC – PZT at resonant excitation Optically transparent highly conductive contact based on ITO and copper metallization for solar cells Electrophysical properties, memristive and resistive switching of charged domain walls in lithium niobate Crystalline structure of 0.65BiFeO3–0.35Ba1-xSrxTiO3 solid solutions in the vicinity of the morphotropic phase boundary Synthesis and piezoelectric properties of freestanding ferroelectric films based on barium strontium titanate
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1