Improved performance in the aged electron-only devices based on tris-(8-hydroxyquinoline) aluminum thin film as electron transport layer for OLED applications

Gnyaneshwar Dasi, R. Ramarajan, K. Thangaraju
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Abstract

We fabricated the electron-only devices (EODs) based on tris-(8-hydroxyquinoline) aluminum (Alq3) as an electron transport layer (ETL) with the structure of ITO/Alq3 as ETL/LiF/Al and the devices were exposed under the normal ambient for various time periods of aging. The EODs after 6 hrs of aging showed the higher electron current density (1.516 mA/cm2 at 4 V, 3.472 mA/cm2 at 6V, and 6.443 mA/cm2 at 8V) when compared to that (0.406 mA/cm2 at 4V, 0.582 mA/cm2 at 6V, and 5.18 mA/cm2 at 8V) of pristine EOD device. The TRPL spectra of pristine and aged (under the normal ambient) Alq3 samples show the decrease of PL decay lifetimes as the aging period increases, which is consistent with the decreased device performances of the further aged devices. The improved device electrical performance of the 6 hrs aged EODs may be attributed to the improved interface properties in the device upon biasing of the pristine device. It is reported that upon aging the luminescent quencher (carbonyl group) formed in the Alq3 i...
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基于三-(8-羟基喹啉)铝薄膜作为OLED电子传输层的老化电子器件的性能改进
以三-(8-羟基喹啉)铝(Alq3)为电子传输层(ETL),以ITO/Alq3为ETL/ liff /Al结构制备了电子纯电子器件(eod),并将器件暴露在正常环境下进行不同时间的老化处理。老化6 h后的EOD器件的电子电流密度(4V时为1.516 mA/cm2, 6V时为3.472 mA/cm2, 8V时为6.443 mA/cm2)高于原始EOD器件(4V时为0.406 mA/cm2, 6V时为0.582 mA/cm2, 8V时为5.18 mA/cm2)。原始和老化(正常环境下)Alq3样品的TRPL光谱显示,随着老化周期的增加,PL衰减寿命减少,这与进一步老化的器件性能下降是一致的。经过6小时老化处理的爆炸装置,其电气性能的提高可能是由于在原始装置偏置后,装置内部的接口性能得到了改善。据报道,时效后在Alq3中形成的发光淬灭剂(羰基)…
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