Ultrafast Nonlinear Carrier Dynamics in n-Doped Ge at High Field Strengths

A. Gupta, V. Gupta, A. Sharma, G. Polónyi, J. Fülöp
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Abstract

Ultrafast carrier dynamics in n-doped Ge is investigated by THz pump—THz probe spectroscopy with pump THz field strengths up to <0.45 MV/cm provided by a user-accessible compact nonlinear THz spectroscopy facility at ELI-ALPS. The saturation and recovery of the free-carrier absorption is observed on picosecond time scale at 300 K and 95 K temperatures. Furthermore, the intensity-dependent modulation of the refractive index is also observed.
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高场强下n掺杂锗的超快非线性载流子动力学
利用ELI-ALPS用户可访问的紧凑非线性太赫兹光谱设备提供的泵浦太赫兹场强<0.45 MV/cm的太赫兹探针光谱,研究了n掺杂Ge中的超快载流子动力学。在皮秒时间尺度上,在300 K和95 K温度下观察了自由载流子吸收的饱和和恢复。此外,还观察到折射率的强度依赖性调制。
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