AlYN Thin Films with High Y Content: Microstructure and Performance

D. Solonenko, J. Strube, Jannick Fammels, E. Fisslthaler, Volker Röbisch, K. Howell, T. Sinani, Julian Pilz, V. Pashchenko, S. Risquez, M. Moridi, Gudrun Bruckner
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Abstract

Pseudobinary nitride alloys display enhanced piezoelectric properties compared to their nonalloyed counterparts enabling their wide application in high‐performance transducers and acoustic wave resonators. Their fabrication remains challenging because of their inherently stochastic nature, which requires in‐depth understanding of the film growth dynamics and the interplay of deposition parameters. Herein, thin Al1−xYxN films are produced with varied yttrium content in the range from x = 0.09 to 0.28 on a gradient seed layer on 200‐mm Si substrates and investigated via various X‐ray diffraction methods, high‐resolution scanning transmission electron microscopy, nanoindentation, and atomic force microscopy. Bulk acoustic wave resonators, solidly mounted on a multilayer acoustic isolation, are fabricated to analyze the piezoelectric performance of the films and to extract corresponding material parameters via fitting of the high‐frequency electrical response by 1D Mason's model. The trend of declining coupling is explained by the lattice softening and the increase in electron density, experimentally observed by monitoring reduced elastic modulus and dielectric constant values, respectively. The absence of expected enhancement of the piezoelectric modulus is interpreted by the presence of oxygen impurities, facilitating the inhomogeneous strain of the AlYN lattice, which effectively cancels the energy flattening phenomenon, found in III–V pseudobinary alloys.
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高Y含量AlYN薄膜的微观结构与性能
与非合金合金相比,伪二元氮化物合金显示出增强的压电性能,使其在高性能换能器和声波谐振器中得到广泛应用。由于其固有的随机性,它们的制造仍然具有挑战性,这需要深入了解薄膜生长动力学和沉积参数的相互作用。本文在200毫米Si衬底上的梯度种子层上制备了钇含量从x = 0.09到0.28不等的Al1−xYxN薄膜,并通过各种x射线衍射方法、高分辨率扫描透射电子显微镜、纳米压痕和原子力显微镜进行了研究。将体声波谐振器固定在多层隔声层上,分析薄膜的压电性能,并通过1D Mason模型拟合高频电响应,提取相应的材料参数。通过监测弹性模量的降低和介电常数的降低,分别观察到晶格软化和电子密度的增加,从而解释了耦合下降的趋势。没有预期的压电模量增强是由氧杂质的存在解释的,促进了AlYN晶格的非均匀应变,这有效地抵消了III-V伪二元合金中发现的能量平坦现象。
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