C. Mart, A. Viegas, S. Eßlinger, M. Czernohorsky, W. Weinreich, D. Mutschall, A. Kaiser, N. Neumann, T. Großmann, K. Hiller, L. Eng
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引用次数: 3
Abstract
Nanometer-thin ferroelectric hafnium oxide (HfO2) films enable manufacturing of integrated infrared sensors in a CMOS compatible process. By depositing the pyroelectric film on an area-enhanced substrate, we significantly improve the sensor element response by a factor of more than 12. Integration challenges of doped HfO2 in 3D structures are assessed, and the pyroelectric signal amplitude is compared for Si-doped material and the Hf0.5Zr0.5O2 mixed oxide.
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