S. Maximenko, S. Messenger, C. Cress, M. González, J. A. Freitas, R. Walters
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引用次数: 2
Abstract
We report the results of the characterization of irradiated InGaP2/GaAs/Ge multijunction (MJ) solar cells using the cathodoluminescence (CL) imaging/spectroscopy and electron beam induced current (EBIC) modes of scanning electron microscopy (SEM). These techniques were applied to verify the influence of irradiation damage on the optoelectronic properties of each subcell triple junction structure and correlate illuminated (AM0, 1 sun, 25°C) currentquantum efficiency (QE) characteristics.
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